High Current Switching MOSFET Slkor SL180N03Q Suitable for DC DC and AC DC Converters Applications
Key Attributes
Model Number:
SL180N03Q
Product Custom Attributes
Current - Continuous Drain(Id):
178A
Operating Temperature -:
-
RDS(on):
2.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
117pF
Input Capacitance(Ciss):
2.975nF
Output Capacitance(Coss):
2.65nF
Pd - Power Dissipation:
78W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SL180N03Q
Package:
PDFN-8L(5x6)
Product Description
Product Overview
This Power MOSFET is produced using advanced SGT technology, specifically designed to minimize conduction loss, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. It is ideal for current switching in DC/DC and AC/DC converters, power management applications, and motor driving, including quick and wireless charging.
Product Attributes
- Brand: SLKORMicro
- Model: SL180N03Q
- Package: PDFN5*6-8L
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-source Voltage | VDS | 30 | V | |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 178 | A | TC=25 |
| Continuous Drain Current | ID | 110 | A | TC=100 |
| Pulsed Drain Current | IDM | 485 | A | TC=25, Tp Limited By Tjmax (note1) |
| Maximum Power Dissipation | PD | 78 | W | TC=25 |
| Avalanche energy, single Pulse | EAS | 101 | mJ | L=0.5mH (note2) |
| Thermal Resistance Junction to Case | RθJC | 1.2 | ℃/W | |
| Thermal Resistance, Junction to Ambient | RθJA | 50 | ℃/W | |
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | ℃ | |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=1mA |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Zero gate voltage drain current | IDSS | 5 | μA | VDS=30V, TC =55 |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.2 - 2.5 | V | VDS=VGS, ID=250μA |
| Drain-source on-state resistance | RDS(on) | 1.1 - 1.4 | mΩ | VGS=10V, ID=20A |
| Drain-source on-state resistance | RDS(on) | 2.1 - 2.8 | mΩ | VGS=4.5V, ID=15A |
| Input Capacitance | Ciss | 2975 | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | 2650 | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 117 | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Gate Resistance | RG | 1.4 | Ω | VGS=0VVDS=0Vf=1MHz |
| Turn-on delay time | td(on) | 6 | nS | VGS=10V VDS=15V, RL=0.75ΩRG=3Ω |
| Turn-on Rise time | tr | 9 | nS | VGS=10V VDS=15V, RL=0.75ΩRG=3Ω |
| Turn-off delay time | td(off) | 26 | nS | VGS=10V VDS=15V, RL=0.75ΩRG=3Ω |
| Turn-off Fall time | tf | 10 | nS | VGS=10V VDS=15V, RL=0.75ΩRG=3Ω |
| Gate Total Charge | QG | 39 | nC | VGS=10V, VDS=15V, ID=20A |
| Gate-Source Charge | QgS | 8.6 | nC | VGS=10V, VDS=15V, ID=20A |
| Gate-Drain Charge | QgD | 5.0 | nC | VGS=10V, VDS=15V, ID=20A |
| Body Diode Forward Voltage | VSD | 0.68 - 1.0 | V | VGS=0V, ISD=1A, T J = 25 |
| Body Diode Forward Current | Is | 78 | A | |
| Body Diode Reverse Recovery Time | Trr | 51 | ns | TJ=25IF=20A, DIF/dt =100A/μs |
| Body Diode Reverse Recovery Charge | Qrr | 57 | nC | TJ=25IF=20A, DIF/dt =100A/μs |
2312160125_Slkor-SL180N03Q_C19632489.pdf
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