High Speed Switching Silicon Transistor UTC 2SC5569G-AB3-R Suitable for Relay Motor and Lamp Drivers
Key Attributes
Model Number:
2SC5569G-AB3-R
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
560@500mA,2V
Transition Frequency(fT):
330MHz
Vce Saturation(VCE(sat)):
240mV@3.5A,175mA
Pd - Power Dissipation:
3.5W
Current - Collector(Ic):
7A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC5569G-AB3-R
Package:
SOT-89
Product Description
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR
The 2SC5569 is an NPN silicon transistor designed for DC/DC converter applications. It features high current capacitance, low collector-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is complementary to the 2SA2016 and suitable for relay drivers, lamp drivers, motor drivers, and strobes.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | Ic=10A,IE=0 | 80 | V | ||
| Collector to Emitter Breakdown Voltage | V(BR)CEO | Ic=1mA,RBE= | 50 | V | ||
| Emitter to Base Breakdown Voltage | V(BR)EBO | IE=10A,IE=0 | 6 | V | ||
| Collector Cut-Off Current | ICBO | VCB=40V,IE=0 | 0.1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=4V,Ic=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=2V,Ic=500mA | 200 | 560 | ||
| Collector to Emitter Saturation Voltage | VCE(SAT) | Ic=3.5A,IB=175mA | 160 | 240 | mV | |
| Ic=2A,IB=40mA | 110 | 170 | mV | |||
| Base to Emitter Saturation Voltage | VBE(SAT) | Ic=2A,IB=40mA | 0.83 | 1.2 | V | |
| Gain Bandwidth Product | fT | VCE=10V,Ic=500mA | 330 | MHz | ||
| Output Capacitance | COB | VCB=10V, f=1MHz | 28 | pF | ||
| Turn-On Time | TON | See specified Test Circuit | 30 | ns | ||
| Storage Time | TSTG | See specified Test Circuit | 420 | ns | ||
| Fall Time | TF | See specified Test Circuit | 25 | ns |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 80 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | Ic | 7 | A |
| Collector Current (Pulse) | Icp | 10 | A |
| Base Current | IB | 1.2 | A |
| Collector Dissipation (Note 2) | PC | 1.3 | W |
| Collector Dissipation (TC=25C) | PC | 3.5 | W |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -55 ~ +150 | C |
2411121117_UTC-2SC5569G-AB3-R_C5310376.pdf
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