TOSHIBA 2SC2873-Y TE12L CF power amplifier transistor silicon NPN epitaxial type with fast switching
Key Attributes
Model Number:
2SC2873-Y(TE12L,CF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@500mA,2V
Transition Frequency(fT):
120MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
500mV@1A,0.05A
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC2873-Y(TE12L,CF
Package:
SOT-89
Product Description
Product Overview
The TOSHIBA 2SC2873 is a silicon NPN epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage of 0.5 V (max) at 1 A, high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon NPN Epitaxial Transistor (PCT Process)
- Complementary to: 2SA1213
- Package: Small flat package (2-5K1A)
- Weight: 0.05 g (typ.)
- Start of commercial production: 1980-03
- Environmental Compliance: RoHS compatible (indicated by a line beside Lot No.)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 50 V, IE = 0 | - | - | 0.1 | A |
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | - | - | 0.1 | A |
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | - | - | V |
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.5 A | 70 | - | 240 | - |
| hFE (2) | VCE = 2 V, IC = 2.0 A | 20 | - | - | - | |
| Collector-emitter saturation voltage | VCE(sat) | IC = 1 A, IB = 0.05 A | - | - | 0.5 | V |
| Base-emitter saturation voltage | VBE(sat) | IC = 1 A, IB = 0.05 A | - | - | 1.2 | V |
| Transition frequency | fT | VCE = 2 V, IC = 0.5 A | - | 120 | - | MHz |
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | - | 30 | - | pF |
| Switching time | Turn-on time | - | 0.1 | - | s | |
| Storage time | tstg | - | 1.0 | - | s | |
| Fall time | tf | - | 0.1 | - | s |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 2 | A |
| Base current | IB | 0.4 | A |
| Collector power dissipation (mounted on ceramic substrate) | PC (Note 1) | 500 to 1000 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
2410121905_TOSHIBA-2SC2873-Y-TE12L-CF_C168896.pdf
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