Bipolar Transistor Arrays

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackingMarkingCollector-Base Voltage (VCBO)Collector

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Emitter VoltagehFE RankGreen Package2SD669xG-x-AA3-RSOT-223B C E120V

Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: NPN Silicon TransistorCertifications: Lead Free, Halogen FreeTechnical SpecificationsParamet

Product OverviewThe RN1307 to RN1309 series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. This design reduces the need for external components, leading to smaller system sizes and simplified assembly. These transistors are complementary to the RN2307 to RN2309 series and are AEC-Q101 qualified.Product AttributesBrand: ToshibaType: Silicon NPN Epitaxial Bipolar Transistor (Bias Resistor built-in)Process: PCT ProcessCertifications: AEC

Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and is complementary to the 2SA1163. The transistor comes in a small package.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial TransistorProcess: PCT processCertifications:

Product OverviewThe RN1114 to RN1118 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio power amplifiers, DC-DC converters, and voltage regulators.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical

Product OverviewThe UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small signal amplifiers across the VHF to UHF frequency bands.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: Silicon EpitaxialCertifications: Lead Free, Halogen

Product OverviewThe 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.Product AttributesBrand: TOSHIBAProduct Type: Bipolar TransistorsMaterial: SiliconType: PNP Triple-DiffusedCertifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS

Product OverviewThe UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDProduct Type: PNP SILICON TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolTest ConditionsRatingUnitCollector

TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is complementary to the TMBT3906. Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Transistor Complementary to: TMBT3906 Start of commercial production: 2015-01-08 Technical

Product OverviewThe RN1107MFV to RN1109MFV series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are manufactured using the PCT Process and are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. They are AEC-Q101 qualified and come in an ultra-small package suitable for high-density mounting. The integrated bias resistor simplifies circuit design by reducing the

Product OverviewThe TBD62502A and TBD62503A series are 7-channel sink type DMOS transistor arrays designed for high-voltage and high-current applications. These integrated circuits feature 7 built-in circuits, offering a maximum output voltage of 50V and a maximum output current of 300mA per channel. They are available in various package types, including DIP, SOP, SSOP, and P-SOP, catering to different mounting requirements. Careful consideration of thermal conditions during

Product OverviewThe TOSHIBA RN1901~RN1906 series are silicon NPN epitaxial transistors featuring built-in bias resistors (PCT Process). These transistors are designed for switching, inverter, interface, and driver circuit applications. They are available in US6 (ultra super mini type with 6 leads) packages, offering simplified circuit design, reduced part count, and streamlined manufacturing processes. These devices are complementary to the RN2901 to RN2906 series.Product

Product OverviewThe UMW ULN2003 is a high-voltage, high-current Darlington driver IC featuring 7 NPN Darlington pairs. It is designed for applications requiring interface with TTL, CMOS, and PMOS logic levels, offering direct compatibility without the need for logic buffers. Each Darlington pair includes a 2.7K series resistor and open-collector outputs with integrated clamp diodes for switching inductive loads. With a sink current capability of up to 500mA per channel, a

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Base Voltage (VCBO)Collector-Emitter

Product OverviewThe TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays with built-in clamp diodes for switching inductive loads. These integrated circuits offer high voltage and high current capabilities, making them suitable for various applications requiring robust output driving.Product AttributesBrand: TOSHIBAMaterial: Silicon MonolithicOrigin: Japan (implied by brand and typical manufacturing locations)Technical SpecificationsSeriesPart

Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).Product AttributesBrand: TOSHIBAMaterial: SiliconType: NPN Epitaxial TransistorOrigin: Japan (implied by TOSHIBA)Certifications:

Product OverviewThe RN2101MFV to RN2106MFV series are silicon PNP epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. They offer ultra-small packaging suitable for high-density mounting, and the built-in resistor reduces external component count, leading to smaller system size and faster assembly times. Toshiba provides a range of resistance values

Product OverviewThe RN1101MFV to RN1106MFV series are Silicon NPN Epitaxial Type Bipolar Transistors featuring an integrated bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. They offer an ultra-small package suitable for high-density mounting, reducing the need for external components and simplifying assembly. Toshiba provides a range of resistance values to accommodate diverse circuit designs, and