Bipolar Transistor Arrays
General Purpose NPN Silicon Transistor UTC 2SD669AL-C-T60-K Suitable for Power Amplifier Electronics
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES ...
NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: ...
Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications
Product OverviewThe UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable ...
Integrated Bias Resistor Bipolar Transistor Silicon NPN Type TOSHIBA RN1309 TE85L F for Circuit Assembly
Product OverviewThe RN1307 to RN1309 series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. This design reduces the need for external components, leading to smaller system sizes and simplified assembly. These transistors are complementary to the RN2307 to RN2309 ...
General Purpose Amplifier Transistor TOSHIBA 2SC2713-GR LXGF Silicon NPN with Low Noise and High hFE
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), low noise (NF = 1dB typ.), and ...
Bias Resistor Built in Silicon NPN Epitaxial Transistor TOSHIBA RN1115 LF CT for Electronic Switching
Product OverviewThe RN1114 to RN1118 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by ...
NPN transistor UTC 2SD882L-P-T60-K suitable for in audio amplifiers voltage regulators and DC-DC converter circuits
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio ...
Low noise NPN epitaxial silicon transistor UTC 2SC5006G-AN3-R suitable for VHF UHF amplifier applications
Product OverviewThe UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small ...
PNP Triple Diffused Bipolar Transistor TOSHIBA 2SA1943N S1 E S Silicon Type for Power Amplification
Product OverviewThe 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio ...
Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio amplifier and voltage regulator
Product OverviewThe UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.Product AttributesBrand: ...
TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits
TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is ...
RN1107MFV L3F CT Silicon NPN Epitaxial Transistor with Integrated Bias Resistor AEC Q101 Certified
Product OverviewThe RN1107MFV to RN1109MFV series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are manufactured using the PCT Process and are designed for various applications including switching, inverter circuits, interfacing, and driver ...
7 channel sink type DMOS transistor array TOSHIBA TBD62503AFWGZ EHZ with 50V output voltage and 300mA current
Product OverviewThe TBD62502A and TBD62503A series are 7-channel sink type DMOS transistor arrays designed for high-voltage and high-current applications. These integrated circuits feature 7 built-in circuits, offering a maximum output voltage of 50V and a maximum output current of 300mA per channel...
TOSHIBA RN1906 LF CT US6 Package Silicon NPN Transistor Suitable for Switching and Inverter Circuits
Product OverviewThe TOSHIBA RN1901~RN1906 series are silicon NPN epitaxial transistors featuring built-in bias resistors (PCT Process). These transistors are designed for switching, inverter, interface, and driver circuit applications. They are available in US6 (ultra super mini type with 6 leads) ...
UMW ULN2003APWR UMW High Voltage Darlington Driver IC with 500mA Sink Current per Channel Capability
Product OverviewThe UMW ULN2003 is a high-voltage, high-current Darlington driver IC featuring 7 NPN Darlington pairs. It is designed for applications requiring interface with TTL, CMOS, and PMOS logic levels, offering direct compatibility without the need for logic buffers. Each Darlington pair ...
PNP Silicon Transistor UTC 2SA1797G-B-AB3-R with Low Saturation Voltage and Excellent DC Current Gain
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.Product AttributesBrand: UNISONIC ...
High voltage 8 channel sink type DMOS transistor array TOSHIBA TBD62083APG Z HZW with clamp diodes
Product OverviewThe TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays with built-in clamp diodes for switching inductive loads. These integrated circuits offer high voltage and high current capabilities, making them suitable for various applications requiring robust ...
TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage
Product OverviewThe TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V ...
Switching and Driver Circuit Silicon NPN Transistor TOSHIBA RN1102MFV L3F with Built in Bias Resistor
Product OverviewThe RN1101MFV to RN1106MFV series are Silicon NPN Epitaxial Type Bipolar Transistors featuring an integrated bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuits. They offer an ultra-small package suitable for ...
High density mounting PNP transistor TOSHIBA RN2105MFV L3F CT ideal for switching and driver circuit
Product OverviewThe RN2101MFV to RN2106MFV series are silicon PNP epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. They offer ultra-small packaging suitable for high...
