NPN transistor UTC 2SD882L-P-T60-K suitable for in audio amplifiers voltage regulators and DC-DC converter circuits
Key Attributes
Model Number:
2SD882L-P-T60-K
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
1uA
DC Current Gain:
160@1A,2V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
300mV
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
2SD882L-P-T60-K
Package:
TO-126
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD882 is an NPN Silicon Transistor designed for medium power, low voltage applications. It features high current output up to 3A and low saturation voltage, making it a complementary part to the 2SB772. This transistor is suitable for use in audio power amplifiers, DC-DC converters, and voltage regulators.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATING | ||||||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 30 | V | |||
| Emitter-Base Voltage | VEBO | 7 | V | |||
| Collector Current | IC | 3 | A | |||
| Pulse Collector Current | ICP | 7 | A | |||
| Base Current | IB | 0.6 | A | |||
| Collector Dissipation (TA=25C) | PC | TO-251/TO-252 | 1 | W | ||
| TO-126/TO-126C/TO-126S/TO-92NL | 0.8 | W | ||||
| Junction Temperature | TJ | +150 | C | |||
| Storage Temperature | TSTG | -55 | ~ | +150 | C | |
| ELECTRICAL CHARACTERISTICS | ||||||
| Collector-Base Breakdown Voltage | BVCBO | IC=100A, IE=0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, IB=0 | 30 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE=100A, IC=0 | 7 | V | ||
| Collector Cut-off Current | ICBO | VCB=30V, IE=0 | 1000 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=3V, IC=0 | 1000 | nA | ||
| DC Current Gain | hFE1 | VCE=2V, IC=20mA | 30 | 200 | ||
| hFE2 | VCE=2V, IC=1A | 100 | 400 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=2A, IB=0.2A | 0.3 | 0.5 | V | |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=2A, IB=0.2A | 1.0 | 2.0 | V | |
| Current Gain Bandwidth Product | fT | VCE=5V, IC=0.1A | 80 | MHz | ||
| Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 45 | pF | ||
2304140030_UTC-2SD882L-P-T60-K_C71140.pdf
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