Slkor BT151D-600R

Key Attributes
Model Number: BT151D-600R
Product Custom Attributes
Operating Temperature:
-40℃~+125℃
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
20mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
-
Gate Trigger Voltage (Vgt):
1V
Mfr. Part #:
BT151D-600R
Package:
TO-252
Product Description

Product Overview

The BT151 Series are standard SCRs (Silicon Controlled Rectifiers) designed for various AC power control applications. They are suitable for use in washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.

Key Features:

  • Sensitive Gate SCR
  • Standard SCRs
  • Available in TO-263, TO-220C, TO-252, and TO-251 packages.
  • Repetitive Peak Off-State Voltage ratings of 600V and 800V.
  • RMS On-State Current of 12A.
Brand ShenZhenHanKingyuan Electronic CO.,Ltd
Series BT151 Series
Package Types TO-263, TO-220C, TO-252, TO-251
Technology Sensitive Gate SCR
Symbol Parameter Conditions Ratings / Value Unit
VDRM / VRRM Repetitive Peak Off-State Voltage 600 / 800 V
IT(RMS) R.M.S On-State Current Tc=105C 12 A
IT(AV) On-state average current TC=105C 7.5 A
ITSM Surge On-State Current Tp=10ms/tp=8.3ms 120 / 132 A
It It for fusing Tp=10ms 75 As
PGM Peak Gate Power Dissipation Tj=125C 2 W
PG(AV) Average Gate Power Dissipation Tj=125C 0.5 W
Tj Operating Junction Temperature -40 ~ 125 C
TSTG Storage Temperature -40 ~ 150 C
IDRM Repetitive Peak Off-State Current Tc=25C / Tc=125C 10 uA / 1 mA
IRRM Repetitive Peak Reverse Current Tc=25C / Tc=125C 10 uA / 1 mA
VTM Forward "on" voltage IT=23A, tp=380us 1.7 V
VGT Gate trigger voltage VD=12V ,RL=30 1.0 V
di/dt Critical rate of rise of on-state current Tj=125C, IG=2xIGT, tr100ns 50 A/us
IGT Gate trigger current VD=12V, IT=0.1A 20 mA
IL Latching current IG=1.2IGT 40 mA
IH Holding current IT=0.1A 30 mA
VGD Gate non-trigger voltage VD=VDRM, TJ=125C,RL=3.3K,RGK=1K 0.25 V
dv/dt Critical-rate of rise of commutation voltage TJ=125C, VD=2/3VDRM, Gate open circuit 200 V/us
Rth(j-c) Thermal resistance Junction to case 1 C/W
Rth(j-a) Thermal resistance Junction to ambient 50 C/W

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