Power Management Device SLkor SL10N06A Trench Power MV MOSFET Featuring Low RDS ON and Thermal Package

Key Attributes
Model Number: SL10N06A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
1.018nF@30V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SL10N06A
Package:
SOT-223
Product Description

Product Overview

The SL10N06A is a Trench Power MV MOSFET featuring a high-density cell design for low RDS(ON) and an excellent package for heat dissipation. It is designed for applications such as DC-DC converters and power management functions.

Product Attributes

  • Brand: SLKOR Micro
  • Model: SL10N06A
  • Technology: Trench Power MV MOSFET
  • Package: SOT-223

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Absolute Maximum RatingsVDS60V
VGS±20V
ID10A
IDMPulsed Drain Current33A
PD@ TC=251.2W
RJAThermal Resistance Junction-to-Ambient105/ W
TJ ,TSTGJunction and Storage Temperature Range-55+150
Electrical CharacteristicsBVDSSVGS= 0V, ID=250A60V
IDSSVDS=60V,VGS=0V1μA
IGSS1VGS= ±20V, VDS=0V±100nA
VGS(th)VDS= VGS, ID=250μA1.01.72.5V
RDS(ON)VGS= 10V, ID=5A3035m℆
VGS= 4.5V, ID=4A3545m℆
VSDIS=5A,VGS=0V0.81.2V
Dynamic ParametersCissVDS=30V,VGS=0V,f=1MHZ1018pF
Coss70pF
Crss62pF
QgVGS=10V,VDS=30V,ID=10A26nC
Qgs5.4
Qgd6.5
Switching ParametersQrrIF=20A, di/dt=500A/us11.7
trr23ns
tD(on)VGS=10V,VDD=30V, ID=2A,RL=1℆, RGEN=3℆10
tr20
tD(off)29
tf22

2201210930_Slkor-SL10N06A_C2965541.pdf

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