YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Key Attributes
Model Number:
MG400HF12MIC2
Product Custom Attributes
Pd - Power Dissipation:
1.76kW
Td(off):
376ns
Operating Temperature:
-40℃~+150℃
Td(on):
162ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.45nF
Input Capacitance(Cies):
12.6nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@6mA
Gate Charge(Qg):
590nC@15V
Reverse Recovery Time(trr):
198ns
Switching Energy(Eoff):
22.9mJ
Turn-On Energy (Eon):
13.6mJ
Mfr. Part #:
MG400HF12MIC2
Package:
Screw Terminals
Product Description
Product Overview
The MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast switching speeds and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power applications.
Product Attributes
- Brand: Yangjie
- Model: MG400HF12MIC2
- Certifications: RoHS Compliant
- Origin: China (implied by website)
Technical Specifications
| Description | Symbol | Values | Units | Conditions |
| Absolute Maximum Ratings | VCES | 1200 | V | Collector - Emitter Voltage |
| VGES | ±20 | V | Gate-Emitter Voltage | |
| IC (TC=25) | 450 | A | DC Collector Current | |
| IC (TC=80) | 300 | A | DC Collector Current | |
| ICM (tp=1ms) | 600 | A | Repetitive Peak Collector Current TC=25C | |
| Ptot | 1760 | W | Power Dissipation Per IGBT | |
| TJ | -40 to +150 | °C | Junction Temperature Range | |
| TSTG | -40 to +125 | °C | Storage Temperature Range | |
| Viso | 3000 | V | Insulation Test Voltage AC, t=1min | |
| Electrical Characteristics of IGBT | V(BR)CES | 1200 | V | Collector-Emitter Breakdown Voltage VGE=0V, IC=1mA |
| ICES (TJ=25°C) | 0.5 | mA | Collector Leakage Current VCE=1200V,VGE=0V | |
| ICES (TJ=125°C) | 1 | mA | Collector Leakage Current VCE=1200V, VGE=0V | |
| IGES | -200 to 200 | nA | Gate Leakage Current VCE=0V, VGE=±20V | |
| VGE(th) | 5 to 7 | V | Gate - Emitter Threshold Voltage VCE=VGE, IC=6mA | |
| VCE(sat) (TJ=25°C) | 1.8 to 2.0 | V | Collector Emitter Saturation Voltage IC=300A, VGE=15V | |
| VCE(sat) (TJ=125°C) | 2.0 to 2.3 | V | Collector Emitter Saturation Voltage IC=300A VGE=15V | |
| Cies | 12.6 | nF | Input Capacitance VCE=25V, VGE=0V, f =1MHz | |
| Cres | 0.45 | nF | Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz | |
| SCSOA | 1700 | A | Short Circuit Safe Operating Area VCC=600V, VGE≤15V, TJ=125°C, 10 μs | |
| Switching Characteristics (IGBT) | td(on) (TJ=25°C) | 162 | ns | Turn-on Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load |
| tr (TJ=25°C) | 53 | ns | Rise Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| td(off) (TJ=25°C) | 376 | ns | Turn-off Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| Tf (TJ=25°C) | 133 | ns | Fall Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| td(on) (TJ=125°C) | 180 | ns | Turn-on Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| tr (TJ=125°C) | 56 | ns | Rise Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| td(off) (TJ=125°C) | 429 | ns | Turn-off Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| Tf (TJ=125°C) | 292 | ns | Fall Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load | |
| Switching Loss (IGBT) | Eon (TJ=25°C) | 13.6 | mJ | Turn-on Switching Loss VCC=600V, RG =3.5Ω IC=300A |
| Eon (TJ=125°C) | 19.2 | mJ | Turn-on Switching Loss VCC=600V, RG =3.5Ω IC=300A | |
| Eoff (TJ=25°C) | 22.9 | mJ | Turn-off Switching Loss VCC=600V, RG =3.5Ω IC=300A | |
| Eoff (TJ=125°C) | 33.8 | mJ | Turn-off Switching Loss VCC=600V, RG =3.5Ω IC=300A | |
| Electrical Characteristics of FWD | VFM (TJ=25°C) | 1.81 to 2.0 | V | Forward Voltage IF=300A, VGE=0V |
| VFM (TJ=125°C) | 1.95 to 2.3 | V | Forward Voltage IF=300A, VGE=0V | |
| trr (TJ=25°C) | 198 | ns | Reverse Recovery Time IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V | |
| trr (TJ=125°C) | 365 | ns | Reverse Recovery Time IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V | |
| Dynamic Characteristics (FWD) | Irr (TJ=25°C) | 185 | A | Peak Reverse Recovery Current TJ=25°C, IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V |
| Qrr (TJ=25°C) | 15.9 | mJ | Reverse Recovery Charge TJ=25°C, IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V | |
| Thermal Resistance | RθJC (IGBT) | 0.07 | °C/W | Junction-To-Case (IGBT Part, Per Leg) |
| RθJC (Diode) | 0.17 | °C/W | Junction-To-Case (Diode Part, Per Leg) | |
| RθCS | 0.1 | °C/W | Case-To-Sink (Conductive Grease Applied) | |
| Mounting Torque | Power Terminals | 5 ±15% | N*m | Screw: M6 |
| Mounting Screw | 5 ±15% | N*m | Screw: M6 | |
| Weight | 300 | g | Weight Of Module |
2410121308_YANGJIE-MG400HF12MIC2_C781194.pdf
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