TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage
Key Attributes
Model Number:
2SC5810(T2LXG,ZF)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@0.1A,2V
Vce Saturation(VCE(sat)):
170mV
Type:
NPN
Pd - Power Dissipation:
2W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5810(T2LXG,ZF)
Package:
SC-62
Product Description
Product Overview
The TOSHIBA 2SC5810 is a silicon NPN epitaxial transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation voltage (VCE(sat) = 0.17 V max), and fast switching speeds (tf = 85 ns typ.).
Product Attributes
- Brand: TOSHIBA
- Material: Silicon
- Type: NPN Epitaxial Transistor
- Origin: Japan (implied by TOSHIBA)
- Certifications: RoHS COMPATIBLE / [[G]]/RoHS (indicated by marking)
- Start of commercial production: 2001-06
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 100 V, IE = 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 7 V, IC = 0 | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.1 A | 400 | 1000 | ||
| hFE (2) | VCE = 2 V, IC = 0.3 A | 200 | ||||
| Collector-emitter saturation voltage | VCE (sat) | IC = 300 mA, IB = 6 mA | 0.17 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC = 300 mA, IB = 6 mA | 1.10 | V | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 5 | pF | ||
| Switching time | Rise time | See Figure 1. VCC 30 V, RL = 100 IB1 = 10 mA,IB2 = 10 mA | 35 | ns | ||
| Storage time | 680 | ns | ||||
| Fall time | 85 | ns |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 100 | V |
| Collector-emitter voltage | VCEX | 80 | |
| VCEO | 50 | ||
| Emitter-base voltage | VEBO | 7 | V |
| Collector current | IC (DC) | 1.0 | A |
| ICP (Pulse) | 2.0 | ||
| Base current | IB (DC) | 0.1 | A |
| Collector power dissipation | PC (DC) | 2.0 | W |
| PC (t = 10 s) | 1.0 | ||
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | 55 to 150 | C |
2303230930_TOSHIBA-2SC5810-T2LXG-ZF_C5381789.pdf
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