High cell density trench P channel MOSFET SLkor SL12P03S designed for and synchronous buck converters

Key Attributes
Model Number: SL12P03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
206pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.77nF@15V
Pd - Power Dissipation:
4.5W
Gate Charge(Qg):
22nC@15V
Mfr. Part #:
SL12P03S
Package:
SOP-8
Product Description

Product Overview

The SL12P03S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: SLKORMicro
  • Certifications: RoHS, Green Product
  • Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology

Technical Specifications

SymbolParameterTest ConditionMin.Typ.Max.Unit
Absolute Maximum Ratings
VDSDrain-Source Voltage-30--V
VGSGate-Source Voltage-±20-V
ID@TA=25Continuous Drain Current, VGS @ -10V1--12-A
ID@TA=70Continuous Drain Current, VGS @ -10V1--9-A
IDMPulsed Drain Current2--46-A
EASSingle Pulse Avalanche Energy3-55-mJ
IASAvalanche Current--50-A
PD@TA=25Total Power Dissipation4-4.5-W
TSTGStorage Temperature Range-55-150
TJOperating Junction Temperature Range-55-150
Thermal Data
RJAThermal Resistance Junction-Ambient1--75/W
RJA(t10s)Thermal Resistance Junction-Ambient1(t10s)--40/W
RJCThermal Resistance Junction-Case1--24/W
Electrical Characteristics (TJ=25 unless otherwise specified)
Off Characteristic
V(BR)DSSDrain-Source Breakdown VoltageVGS=0V, ID= -250A-30--V
IDSSZero Gate Voltage Drain CurrentVDS= -30V, VGS=0V---1A
IGSSGate to Body Leakage CurrentVDS=0V, VGS= ±20V--±100nA
On Characteristic
VGS(th)Gate Threshold VoltageVDS=VGS, ID= -250A-1.0-1.6-2.5V
RDS(on)Static Drain-Source on-ResistanceVGS= -10V, ID= -10A-9.514m
RDS(on)Static Drain-Source on-ResistanceVGS= -4.5V, ID= -5A-1724m
Dynamic Characteristics
CissInput CapacitanceVDS= -15V, VGS=0V, f=1.0MHz-1770-pF
CossOutput CapacitanceVDS= -15V, VGS=0V, f=1.0MHz-233-pF
CrssReverse Transfer CapacitanceVDS= -15V, VGS=0V, f=1.0MHz-206-pF
QgTotal Gate ChargeVDS= -15V, ID= -5A, VGS= -10V-22-nC
QgsGate-Source ChargeVDS= -15V, ID= -5A, VGS= -10V-1.0-nC
QgdGate-Drain(Miller) ChargeVDS= -15V, ID= -5A, VGS= -10V-1.8-nC
Switching Characteristics
td(on)Turn-on Delay TimeVDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5-9-ns
trTurn-on Rise TimeVDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5-13-ns
td(off)Turn-off Delay TimeVDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5-48-ns
tfTurn-off Fall TimeVDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5-20-ns
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain to Source Diode Forward Current---15A
ISMMaximum Pulsed Drain to Source Diode Forward Current---60A
VSDDrain to Source Diode Forward VoltageVGS=0V, IS= -15A--0.8-1.2V
trrReverse Recovery TimeTJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/s-64-ns
QrrReverse Recovery ChargeTJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/s-25-nC

2410121806_Slkor-SL12P03S_C5122626.pdf

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