High cell density trench P channel MOSFET SLkor SL12P03S designed for and synchronous buck converters
Product Overview
The SL12P03S is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: SLKORMicro
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | - | - | V | |
| VGS | Gate-Source Voltage | - | ±20 | - | V | |
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | - | -12 | - | A | |
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | - | -9 | - | A | |
| IDM | Pulsed Drain Current2 | - | -46 | - | A | |
| EAS | Single Pulse Avalanche Energy3 | - | 55 | - | mJ | |
| IAS | Avalanche Current | - | -50 | - | A | |
| PD@TA=25 | Total Power Dissipation4 | - | 4.5 | - | W | |
| TSTG | Storage Temperature Range | -55 | - | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | - | 150 | ||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | - | - | 75 | /W | |
| RJA(t10s) | Thermal Resistance Junction-Ambient1(t10s) | - | - | 40 | /W | |
| RJC | Thermal Resistance Junction-Case1 | - | - | 24 | /W | |
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS= -30V, VGS=0V | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±20V | - | - | ±100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250A | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -10V, ID= -10A | - | 9.5 | 14 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -4.5V, ID= -5A | - | 17 | 24 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | - | 1770 | - | pF |
| Coss | Output Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | - | 206 | - | pF |
| Qg | Total Gate Charge | VDS= -15V, ID= -5A, VGS= -10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | VDS= -15V, ID= -5A, VGS= -10V | - | 1.0 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | VDS= -15V, ID= -5A, VGS= -10V | - | 1.8 | - | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5 | - | 9 | - | ns |
| tr | Turn-on Rise Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5 | - | 13 | - | ns |
| td(off) | Turn-off Delay Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5 | - | 48 | - | ns |
| tf | Turn-off Fall Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5 | - | 20 | - | ns |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -15 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -60 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -15A | - | -0.8 | -1.2 | V |
| trr | Reverse Recovery Time | TJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/s | - | 64 | - | ns |
| Qrr | Reverse Recovery Charge | TJ=25, VDD= -24V,IF=-2.8A, dI/dt=-100A/s | - | 25 | - | nC |
2410121806_Slkor-SL12P03S_C5122626.pdf
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