Low noise NPN epitaxial silicon transistor UTC 2SC5006G-AN3-R suitable for VHF UHF amplifier applications
Key Attributes
Model Number:
2SC5006G-AN3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Transition Frequency(fT):
4.5GHz
Number:
1 NPN
Pd - Power Dissipation:
125mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
2SC5006G-AN3-R
Package:
SOT-523
Product Description
Product Overview
The UTC 2SC5006 is an NPN epitaxial silicon transistor utilizing UTC's advanced technology. It offers a low noise figure, high DC current gain, and high current capability, enabling a wide dynamic range and excellent linearity. This transistor is well-suited for low noise and small signal amplifiers across the VHF to UHF frequency bands.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon Epitaxial
- Certifications: Lead Free, Halogen-Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Power Dissipation (SOT-323) | Power Dissipation (SOT-523) | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) | Junction Temperature (TJ) | Storage Temperature (TSTG) | Collector Cut-Off Current (ICBO) | Emitter Cutoff Current (IEBO) | DC Current Gain (hFE) | Transition Frequency (fT) | Feedback Capacitance (Cre) |
| 2SC5006L-AL3-R 2SC5006G-AL3-R | SOT-323 | B E C | 200 mW | - | 20 V | 12 V | 3.0 V | 100 mA | +150 C | -60 ~ +150 C | 1.0 A | 1.0 A | 80 - 160 | 4.5 GHz | 0.7 pF |
| 2SC5006L-AN3-R 2SC5006G-AN3-R | SOT-523 | B E C | - | 125 mW | 20 V | 12 V | 3.0 V | 100 mA | +150 C | -60 ~ +150 C | 1.0 A | 1.0 A | 80 - 160 | 4.5 GHz | 0.7 pF |
2212091108_UTC-2SC5006G-AN3-R_C5310369.pdf
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