RN1107MFV L3F CT Silicon NPN Epitaxial Transistor with Integrated Bias Resistor AEC Q101 Certified
Product Overview
The RN1107MFV to RN1109MFV series are silicon NPN epitaxial bipolar transistors featuring an integrated bias resistor. These transistors are manufactured using the PCT Process and are designed for various applications including switching, inverter circuits, interfacing, and driver circuits. They are AEC-Q101 qualified and come in an ultra-small package suitable for high-density mounting. The integrated bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. These devices are complementary to the RN2107MFV to RN2109MFV series.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Complementary to: RN2107MFV to RN2109MFV
Technical Specifications
| Part No. | R1 (k) | R2 (k) | VCBO (V) | VCEO (V) | VEBO (V) | IC (mA) | PC (mW) | Tj (C) | Tstg (C) | ICBO (nA) | ICEO (A) | IEBO (nA) | hFE | VCE(sat) (V) | Cob (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1107MFV | 10 | 47 | 50 | 50 | 6 | 7 | 150 (Note 1) | 150 | -55 to 150 | 100 | 500 | 0.15 | 80 | 0.081 | 0.17 |
| RN1108MFV | 22 | 47 | 50 | 50 | 6 | 7 | 100 (Note 1) | 150 | -55 to 150 | 100 | 500 | 0.145 | 80 | 0.078 | 0.374 |
| RN1109MFV | 47 | 22 | 50 | 50 | 6 | 7 | 15 (Note 1) | 150 | -55 to 150 | 100 | 500 | 0.311 | 70 | 0.167 | 1.71 |
Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm)
2411272154_TOSHIBA-RN1107MFV-L3F-CT_C17532991.pdf
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