TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits

Name: TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: TMBT3904,LM
Availability: InStock

Key Attributes

Model Number: TMBT3904,LM

Product Custom Attributes

Current - Collector Cutoff:

100nA

DC Current Gain:

100@10mA,1V

Transition Frequency(fT):

300MHz

Vce Saturation(VCE(sat)):

300mV

Type:

NPN

Pd - Power Dissipation:

320mW

Current - Collector(Ic):

150mA

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

TMBT3904,LM

Package:

SOT-23

Product Description

TMBT3904 TOSHIBA Transistor Silicon NPN Epitaxial Type

The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high current capabilities, with a VCEO of 50 V and IC of 150 mA (max). It is complementary to the TMBT3906.

Product Attributes

Brand: TOSHIBA
Type: Silicon NPN Epitaxial Transistor
Complementary to: TMBT3906
Start of commercial production: 2015-01-08

Technical Specifications

Characteristics	Symbol	Test Condition	Min	Typ.	Max	Unit
Collector cut-off current	ICBO	VCB = 60 V, IE = 0 mA			0.1	A
Emitter cut-off current	IEBO	VEB = 5 V, IC = 0 mA			0.1	A
DC current gain	hFE	VCE = 1 V, IC = 0.1 mA	60
		VCE = 1 V, IC = 1 mA	80
		VCE = 1 V, IC = 10 mA	100		300
		VCE = 1 V, IC = 50 mA	60
Collector-emitter saturation voltage	VCE (sat)	IC = 10 mA, IB = 1 mA			0.2	V
Collector-emitter saturation voltage	VCE (sat)	IC = 50 mA, IB = 5 mA			0.3	V
Base-emitter saturation voltage	VBE (sat)	IC = 10 mA, IB = 1 mA		0.65	0.85	V
Base-emitter saturation voltage	VBE (sat)	IC = 50 mA, IB = 5 mA			0.95	V
Transition frequency	fT	VCE = 20 V, IC = 10 mA	300			MHz
Noise figure	NF	VCE = 5 V, IC = 0.1 mA, f = 1 kHz, Rg = 1 k			5	dB
Switching times (delay time)	td	IC = 10mA, IB1 = -IB2 = 1mA			35	ns
Switching times (rise time)	tr	IC = 10mA, IB1 = -IB2 = 1mA			35	ns
Switching times (storage time)	ts	IC = 10mA, IB1 = -IB2 = 1mA			200	ns
Switching times (fall time)	tf	IC = 10mA, IB1 = -IB2 = 1mA			50	ns

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	60	V
Collector-emitter voltage	VCEO	50	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	150	mA
Base current	IB	30	mA
Collector power dissipation (Note 1)	PC	320	mW
Collector power dissipation (Note 2)	PC	1000	mW
Junction temperature	Tj	150	C
Storage temperature range	Tstg	-55 to 150	C

Note 1: Mounted on an FR4 board. (25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm² x 3)

Note 2: Mounted on an FR4 board. (25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm²)

Package Dimensions

SOT23

Weight: 0.009g (typ.)

Marking

L W

1. Base

2. Emitter

3. Collector

2410121733_TOSHIBA-TMBT3904-LM_C145154.pdf

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TOSHIBA TMBT3904 LM Silicon NPN Epitaxial Transistor Suitable for Audio Frequency Amplifier Circuits