NPN Silicon Transistor UTC 2SD669AG-C-AB3-R Suitable for Low Frequency Power Amplifier Applications
Key Attributes
Model Number:
2SD669AG-C-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
DC Current Gain:
100@150mA,5V
Transition Frequency(fT):
140MHz
Vce Saturation(VCE(sat)):
1V
Type:
NPN
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2SD669AG-C-AB3-R
Package:
SOT-89
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD669/A is an NPN Silicon Transistor designed for general-purpose applications. It serves as a complementary pair with the UTC 2SB649/A in low-frequency power amplifier circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Collector-Emitter Voltage | hFE Rank | Green Package |
| 2SD669xG-x-AA3-R | SOT-223 | B C E | 120V/160V | x | G |
| 2SD669xG-x-AB3-R | SOT-89 | B C E | 120V/160V | x | G |
| 2SD669xG-x-AE3-R | SOT-23 | B E C | 120V/160V | x | G |
| 2SD669xG-x-AE3-6-R | SOT-23 | E B C | 120V/160V | x | G |
| 2SD669xL-x-T60-K / 2SD669xG-x-T60-K | TO-126 | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T6C-K / 2SD669xG-x-T6C-K | TO-126C | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T6S-K / 2SD669xG-x-T6S-K | TO-126S | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T92-B / 2SD669xG-x-T92-B | TO-92 | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T92-K / 2SD669xG-x-T92-K | TO-92 | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T9N-B / 2SD669xG-x-T9N-B | TO-92NL | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-T9N-K / 2SD669xG-x-T9N-K | TO-92NL | E C B | 120V/160V | x | L/G |
| 2SD669xL-x-TM3-T / 2SD669xG-x-TM3-T | TO-251 | B C E | 120V/160V | x | L/G |
| 2SD669xL-x-TN3-R / 2SD669xG-x-TN3-R | TO-252 | B C E | 120V/160V | x | L/G |
| Parameter | Symbol | Rating | Unit |
| Collector-Base Voltage | VCBO | 180 | V |
| Collector-Emitter Voltage (2SD669) | VCEO | 120 | V |
| Collector-Emitter Voltage (2SD669A) | VCEO | 160 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 1.5 | A |
| Collector Peak Current | IC(PEAK) | 3 | A |
| Base Current | IB | 0.5 | A |
| Power Dissipation (SOT-223/SOT-89) | PD | 0.5 | W |
| Power Dissipation (SOT-23) | PD | 0.35 | W |
| Power Dissipation (TO-126/TO-126S) | PD | 1.3 | W |
| Power Dissipation (TO-126C) | PD | 1 | W |
| Power Dissipation (TO-92/TO-92NL) | PD | 0.6 | W |
| Power Dissipation (TO-251/TO-252) | PD | 2 | W |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature | TSTG | -40 ~ +150 | C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector to Base Breakdown Voltage | BVCBO | IC=1mA, IE=0 | 180 | V | ||
| Collector to Emitter Breakdown Voltage (2SD669) | BVCEO | IC=10mA, RBE= | 120 | V | ||
| Collector to Emitter Breakdown Voltage (2SD669A) | BVCEO | IC=10mA, RBE= | 160 | V | ||
| Collector to Emitter Breakdown Voltage (VBE=0V) (2SD669) | BVCES | IC=1mA, VBE=0V | 120 | V | ||
| Collector to Emitter Breakdown Voltage (VBE=0V) (2SD669A) | BVCES | IC=1mA, VBE=0V | 160 | V | ||
| Emitter to Base Breakdown Voltage | BVEBO | IE=1mA, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=160V, IE=0 | 10 | A | ||
| Emitter Cutoff Current | IEBO | VEB=4V, IC=0 | 10 | A | ||
| DC Current Gain | hFE1 | VCE=5V, IC=150mA | 60 | 320 | ||
| DC Current Gain | hFE2 | VCE=5V, IC=500mA | 30 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=600mA, IB=50mA | 1 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=600mA, IB=50mA | 1.2 | V | ||
| Base-Emitter Voltage | VBE | VCE=5V, IC=150mA | 1.5 | V | ||
| Current Gain Bandwidth Product | fT | VCE=5V, IC=150mA | 140 | MHz | ||
| Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 14 | pF | ||
| Rise Time | tR | VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25s, Duty Cycle1% | 0.5 | s | ||
| Storage Time | tS | 1.5 | s | |||
| Fall Time | tF | 0.7 | s |
2304140030_UTC-2SD669AG-C-AB3-R_C87301.pdf
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