Medium power PNP silicon transistor UTC 2SB772SG-P-AB3-R optimized for audio amplifier and voltage regulator
Key Attributes
Model Number:
2SB772SG-P-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
DC Current Gain:
160@1A,2V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
500mV@2A,0.2A
Type:
PNP
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
2SB772SG-P-AB3-R
Package:
SOT-89
Product Description
Product Overview
The UTC 2SB772S is a medium power, low voltage PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2SD882S.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Type: PNP SILICON TRANSISTOR
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Rating | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -30 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Peak Collector Current | ICP | -7 | A | |
| DC Collector Current | IC | -3 | A | |
| Base Current | IB | -0.6 | A | |
| Power Dissipation | PD | SOT-89 | 0.5 | W |
| SOT-223 | 1 | W | ||
| TO-92 | 0.5 | W | ||
| Junction Temperature | TJ | +150 | C | |
| Storage Temperature | TSTG | -55 ~ +150 | C | |
| Collector-Base Breakdown Voltage | BVCBO | IC=-100A, IE=0 | -40 | V |
| Collector-Emitter Breakdown Voltage | BVCEO | IC=-1mA, IB=0 | -30 | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE=-100A, IC=0 | -5 | V |
| Collector Cut-Off Current | ICBO | VCB=-30V, IE=0 | -1000 | nA |
| Collector Cut-Off Current | ICEO | VCE=-30V, IB=0 | -1000 | nA |
| Emitter Cut-Off Current | IEBO | VEB=-3V, IC=0 | -1000 | nA |
| DC Current Gain | hFE1 | VCE=-2V, IC=-20mA | 30 ~ 200 | |
| VCE=-2V, IC=-1A | 100 ~ 400 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-2A, IB=-0.2A | -0.3 ~ -0.5 | V |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=-2A, IB=-0.2A | -1.0 ~ -2.0 | V |
| Current Gain Bandwidth Product | fT | VCE=-5V, IC=-0.1A | 80 | MHz |
| Output Capacitance | COB | VCB=-10V, IE=0, f=1MHz | 45 | pF |
1809172043_UTC-2SB772SG-P-AB3-R_C146664.pdf
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