Trench Power MV MOSFET Technology Slkor 2SK3018W N Channel Enhancement Mode Field Effect Transistor
Product Overview
The 2SK3018W is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It is designed as a voltage-controlled small signal switch with low input capacitance and fast switching speed. This ESD-protected device offers low input/output leakage, making it suitable for battery-operated systems, solid-state relays, and direct logic-level interfaces with TTL/CMOS.
Product Attributes
- Brand: SLKORMicro
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: ESD Protected Up to 2.5KV (HBM)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 30 | V | |||
| VGS | ±20 | V | ||||
| ID | 300 | mA | ||||
| IDM | Pulsed Drain Current | 1.5 | A | |||
| PD | Total Power Dissipation @ TA=25 | 350 | mW | |||
| RJA | Thermal Resistance Junction-to-Ambient @ Steady State | 357 | / W | |||
| TJ ,TSTG | Junction and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| IDSS | VDS=30V,VGS=0V | 1 | μA | |||
| IGSS1 | VGS= ±20V, VDS=0V | ±10 | μA | |||
| VGS(th) | VDS= VGS, ID=250μA | 0.65 | 1.5 | V | ||
| RDS(ON) | VGS= 10V, ID=300mA | 8.0 | Ω | |||
| RDS(ON) | VGS= 4.5V, ID=200mA | 13.0 | Ω | |||
| VSD | IS=300mA,VGS=0V | 1.2 | V | |||
| Diode Characteristics | IS | Maximum Body-Diode Continuous Current | 340 | mA | ||
| trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/μs | 30 | ns | |||
| Dynamic Parameters | Ciss | VDS=30V,VGS=0V,f=1MHZ | 18 | pF | ||
| Coss | 12 | pF | ||||
| Crss | 7 | pF | ||||
| Switching Parameters | Qg | VGS=10V,VDS=30V,ID=0.3A | 1.7 | 2.4 | nC | |
| tD(on) | VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω | 5 | ns | |||
| tD(off) | 17 | ns |
2201201800_Slkor-2SK3018W_C2965520.pdf
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