PNP Triple Diffused Bipolar Transistor TOSHIBA 2SA1943N S1 E S Silicon Type for Power Amplification
Key Attributes
Model Number:
2SA1943N(S1,E,S)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
DC Current Gain:
80@1A,5V
Transition Frequency(fT):
30MHz
Type:
PNP
Vce Saturation(VCE(sat)):
3V@800mA,8A
Pd - Power Dissipation:
150W
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
230V
Mfr. Part #:
2SA1943N(S1,E,S)
Package:
TO-3P(N)
Product Description
Product Overview
The 2SA1943N is a silicon PNP triple-diffused bipolar transistor designed for power amplification applications. It features a high collector voltage of -230 V (min) and is complementary to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.
Product Attributes
- Brand: TOSHIBA
- Product Type: Bipolar Transistors
- Material: Silicon
- Type: PNP Triple-Diffused
- Certifications: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Collector-base voltage | VCBO | -230 | V | ||||
| Collector-emitter voltage | VCEO | -230 | V | ||||
| Emitter-base voltage | VEBO | -5 | V | ||||
| Collector current (DC) | IC | -15 | A | ||||
| Base current | IB | -1.5 | A | ||||
| Collector power dissipation | PC | 150 | W | Tc = 25 | |||
| Junction temperature | Tj | 150 | |||||
| Storage temperature | Tstg | -55 to 150 | |||||
| Junction-to-case thermal resistance | Rth(j-c) | /W | 0.83 | ||||
| Collector cut-off current | ICBO | A | VCB = -230 V, IE = 0 A | -5.0 | |||
| Emitter cut-off current | IEBO | A | VEB = -5 V, IC = 0 A | -5.0 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | -230 | V | IC = -50 mA, IB = 0 A | |||
| DC current gain | hFE(1) | 80 | VCE = -5 V, IC = -1 A | 160 | |||
| DC current gain | hFE(2) | 35 | VCE = -5 V, IC = -7 A | ||||
| Collector-emitter saturation voltage | VCE(sat) | V | IC = -8 A, IB = -0.8 A | -1.1 | -3.0 | ||
| Base-emitter voltage | VBE | V | VCE = -5 V, IC = -7 A | -0.97 | -1.5 | ||
| Transition frequency | fT | MHz | VCE = -5 V, IC = -1 A | 30 | |||
| Collector output capacitance | Cob | pF | VCB = -10 V, IE = 0 A, f = 1 MHz | 360 |
2411220712_TOSHIBA-2SA1943N-S1-E-S_C6802831.pdf
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