Epitaxial planar NPN transistor UTC 2SD1664G-Q-AB3-R optimized for medium power switching applications
Key Attributes
Model Number:
2SD1664G-Q-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
DC Current Gain:
390@100mA,3V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
400mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
1.9W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
32V
Mfr. Part #:
2SD1664G-Q-AB3-R
Package:
SOT-89
Product Description
Product Overview
The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: NPN Silicon Transistor
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Rating Unit | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 40 | V | ||||
| Collector-Emitter Voltage | VCEO | 32 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current (DC) | IC | 1 | A | ||||
| Collector Current (Pulse) | IC | 2 | (Duty=1/2, PW=20ms) | A | |||
| Collector Power Dissipation (SOT-89) | PC | 0.5 | W | ||||
| Collector Power Dissipation (SOT-23) | PC | 0.3 | W | ||||
| Collector Power Dissipation (TO-252) | PC | 1.9 | W | ||||
| Junction Temperature | TJ | +150 | C | ||||
| Storage Temperature | TSTG | -55 ~ +150 | C | ||||
| Collector Base Breakdown Voltage | BVCBO | 40 | IC= 50A | 40 | V | ||
| Collector Emitter Breakdown Voltage | BVCEO | 32 | IC=1mA | 32 | V | ||
| Emitter Base Breakdown Voltage | BVEBO | 5 | IE=50A | 5 | V | ||
| Collector Cut-Off Current | ICBO | 0.5 | VCB=20V | 0.5 | A | ||
| Emitter Cut-Off Current | IEBO | 0.5 | VEB= 4V | 0.5 | A | ||
| DC Current Gain | hFE | 82-390 | VCE= 3V, Ic= 100mA | 82 | 390 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.15-0.4 | IC/IB=500mA /50mA | 0.15 | 0.4 | V | |
| Transition Frequency | fT | 150 | VCE=5V, IE=-50mA, f=100MHz | 150 | MHz | ||
| Output Capacitance | Cob | 15 | VCB= 10V, IE= 0A, f=1MHz | 15 | pF |
2212091108_UTC-2SD1664G-Q-AB3-R_C5310377.pdf
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