Bipolar Transistor Arrays

Product OverviewThe TBD62783A series is an 8-channel source-type DMOS transistor array designed for switching inductive loads. Each output includes a built-in clamp diode for protection. This series offers high voltage and high current capabilities, making it suitable for various applications requiring robust output driving.Product AttributesBrand: TOSHIBAOrigin: Silicon MonolithicTechnical SpecificationsModelPackage TypeWeight (Typ.)VOUT (MAX)IOUT (MAX per channel)VIN

Product Overview The BC817 is an NPN transistor designed for general AF applications, offering high collector current, high current gain, and a low collector-emitter saturation voltage. It is available in various ranks, each with a specific DC current gain range and marking code. This transistor is suitable for applications requiring efficient current handling and amplification. Product Attributes Type: NPN Transistor Package: SOT-323 Brand (implied): slkormicro Technical

Product OverviewThe RN1301 to RN1306 series are Silicon NPN Epitaxial Type Bipolar Transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit diverse

Product Overview This PNP transistor is designed for surface mount applications, offering high DC current gain. It is suitable for various electronic circuits requiring efficient amplification and switching capabilities. Product Attributes Package Type: SOT-323 Marking Code: FR Model Number: S9015W Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Maximum Ratings (Ta=25 unless otherwise noted) Collector-Base Voltage VCBO -50 V Collector-Emitter

Product OverviewThe WD2001 is a monolithic high voltage and high current Darlington transistor array featuring three NPN Darlington pairs with common-cathode clamp diodes for switching inductive loads. Each pair offers a 500mA collector current rating, with the option to parallel pairs for increased current capability. Integrated 2.7k series base resistors allow direct operation with TTL or 5V CMOS devices. It is suitable for applications such as relay drivers, hammer drivers

Product OverviewThe ULN2003APG/AFWG Series are high-voltage, high-current 7-channel Darlington sink drivers. These integrated circuits feature integral clamp diodes for switching inductive loads, making them suitable for applications such as relay, hammer, lamp, and LED drivers. The 'G' suffix indicates a Lead (Pb)-Free product.Product AttributesBrand: TOSHIBAOrigin: Manufactured by Toshiba MalaysiaCertifications: Lead (Pb)-Free (indicated by 'G' suffix)Technical Specificatio

Product OverviewThe TTC004B is a silicon NPN epitaxial bipolar transistor designed for audio-frequency amplifiers. It features a high collector voltage (VCEO = 160 V min), complementary to the TTA004B, low collector output capacitance (Cob = 12 pF typ.), and a high transition frequency (fT = 100 MHz typ.).Product AttributesBrand: ToshibaMaterial: SiliconType: NPN Epitaxial Bipolar TransistorCertifications: RoHS CompatibleTechnical SpecificationsCharacteristicsSymbolTest

Product OverviewThe RN4984 is a silicon NPN/PNP epitaxial bipolar transistor featuring built-in bias resistors. This integrated design reduces the need for external components, leading to smaller system sizes and simplified assembly. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedTechnical SpecificationsTypeCharacteristicsSymbolRatingUnitTest ConditionQ1 Absolute

Product OverviewThe TOSHIBA 2SA1832 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage and high current capabilities with VCEO = -50 V and IC = -150 mA (max). Key features include excellent hFE linearity, high hFE values, and a complementary relationship with the 2SC4738. Its small package makes it suitable for various electronic applications.Product AttributesBrand:

Product Overview The TD62081APG/AFG Series are high-voltage, high-current 8-channel Darlington sink drivers. Each unit features integral clamp diodes for switching inductive loads, making them suitable for applications such as relay, hammer, lamp, and LED drivers. The '(G)' suffix indicates a Lead (Pb)-Free product. Product Attributes Brand: Toshiba Origin: Silicon Monolithic Certifications: Lead (Pb)-Free (indicated by 'G' suffix) Technical Specifications Type Input

Product Overview The 2SD596 is an NPN transistor offering high DC current gain, making it a complementary part to the 2SB624. It is designed for applications requiring efficient current amplification and is suitable for various electronic circuits. Product Attributes Brand: slkormicro Product Type: NPN Transistors Package: SOT-23 Technical Specifications Parameter Symbol Rating Unit Test Conditions Min Typ Max Absolute Maximum Ratings (Ta = 25) Collector - Base Voltage VCBO

Product OverviewThe TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.Product AttributesBrand: TOSHIBAType: Silicon PNP Epitaxial

Product Overview The ULQ2001, ULQ2003, and ULQ2004 are high voltage, high current Darlington arrays, each featuring seven open collector Darlington pairs with common emitters. These devices are designed for driving a wide range of loads including solenoids, relays, DC motors, LED displays, filament lamps, thermal print-heads, and high power buffers. Key features include an extended temperature range, 500 mA output current per driver (600 mA peak), and integrated suppression

Product OverviewThe TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These integrated circuits offer high voltage and high current capabilities, making them suitable for various applications requiring robust output driving.Product AttributesBrand: Toshiba CorporationMaterial: Silicon Monolithic BiCD Integrated CircuitTechnical SpecificationsSeriesPa

Product OverviewThe RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors, manufactured using the PCT process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistors simplify circuit design, reduce component count, and minimize system size and assembly time. They are AEC-Q101 qualified and complementary to the RN2301 to RN2306 series

Product OverviewThe 2SC2714 is a Silicon NPN Epitaxial Planar Type transistor manufactured by TOSHIBA, utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5dB typ.).Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Planar TypeProcess: PCT processPackage: JEDEC TO-236 / JEITA SC-59

Product OverviewThe Toshiba RN1501 to RN1506 series are NPN epitaxial silicon transistors utilizing a PCT Process. These devices are designed for switching, inverter circuits, interface circuits, and driver circuits. They feature two devices in an SMV (ultra super mini type with 5 leads) package and include built-in bias resistors, simplifying circuit design, reducing part count, and enabling equipment miniaturization. Various resistance values are available to suit diverse

Product OverviewThe BUL49D and BULB49D are high voltage fast-switching NPN power transistors manufactured using high voltage multi-epitaxial planar technology. They offer high voltage capability, low spread of dynamic parameters, and very high switching speed, making them suitable for applications such as electronic transformers for halogen lamps and low-power flyback and forward converters.Product AttributesBrand: STCertifications: ECOPACK (for packages)Technical Specificati

Product Overview The MMBTA55 is a plastic-encapsulated transistor designed for various electronic applications. It features a collector current capability of -0.5A and a collector-emitter voltage of -60V, making it suitable for general-purpose amplification and switching tasks. This transistor is housed in a SOT-23 package, offering a compact solution for space-constrained designs. Product Attributes Brand: SLKOR Micro Package Type: SOT-23 Technical Specifications Parameter

Product Overview The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs. Product Attributes Brand: UNISONIC TECHNOLOGIES CO.,LTD Model: 2SC3647 Material: Silicon Package: SOT-89 Technical Specifications Parameter Symbol Rating Unit Test Conditions Collector to Base