TOSHIBA RN4984 LF CT Silicon NPN PNP Bipolar Transistor for Driver and Interface Circuit Applications
Key Attributes
Model Number:
RN4984,LF(CT
Product Custom Attributes
DC Current Gain:
80@10mA,5V
Emitter-Base Voltage VEBO:
10V
Current - Collector(Ic):
100mA
Type:
NPN+PNP
Input Resistor:
47kΩ
Resistor Ratio:
1
Number:
1 PNP Pre-Biased Transistor, 1 NPN
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN4984,LF(CT
Package:
SOT-363
Product Description
Product Overview
The RN4984 is a silicon NPN/PNP epitaxial bipolar transistor featuring built-in bias resistors. This integrated design reduces the need for external components, leading to smaller system sizes and simplified assembly. It is suitable for switching, inverter circuits, interfacing, and driver circuit applications.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type | Characteristics | Symbol | Rating | Unit | Test Condition |
| Q1 Absolute Maximum Ratings | Collector-base voltage | VCBO | 50 | V | |
| Collector-emitter voltage | VCEO | 50 | V | ||
| Emitter-base voltage | VEBO | 10 | V | ||
| Collector current | IC | 100 | mA | ||
| Q2 Absolute Maximum Ratings | Collector-base voltage | VCBO | -50 | V | |
| Collector-emitter voltage | VCEO | -50 | V | ||
| Emitter-base voltage | VEBO | -10 | V | ||
| Collector current | IC | -100 | mA | ||
| Q1, Q2 Common Absolute Maximum Ratings | Collector power dissipation | PC | 200 | mW | |
| Junction temperature | Tj | 150 | |||
| Storage temperature | Tstg | -55 to 150 | |||
| Q1 Electrical Characteristics | Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA |
| Collector cut-off current | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | |
| Emitter cut-off current | IEBO | 0.15 | mA | VEB = 10 V, IC = 0 mA | |
| DC current gain | hFE | 80 to 250 | VCE = 5 V, IC = 10 mA | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.5 | V | IC = 5 mA, IB = 0.25 mA | |
| Input voltage (ON) | VI(ON) | 1.0 | V | VCE = 0.2 V, IC = 5 mA | |
| Input voltage (off) | VI(off) | 5.0 | V | VCE = 5 V, IC = 0.1 mA | |
| Transition frequency | fT | 150 | MHz | VCE = 10 V, IC = 5 mA | |
| Collector output capacitance | Cob | 6 | pF | VCB = 10 V, IE = 0 mA, f = 1 MHz | |
| Q2 Electrical Characteristics | Collector cut-off current | ICBO | -100 | nA | VCB = -50 V, IE = 0 mA |
| Collector cut-off current | ICEO | -500 | nA | VCE = -50 V, IB = 0 mA | |
| Emitter cut-off current | IEBO | -0.15 | mA | VEB = -10 V, IC = 0 mA | |
| DC current gain | hFE | -80 to -200 | VCE = -5 V, IC = -10 mA | ||
| Collector-emitter saturation voltage | VCE(sat) | -1.5 | V | IC = -5 mA, IB = -0.25 mA | |
| Input voltage (ON) | VI(ON) | -1.0 | V | VCE = -0.2 V, IC = -5 mA | |
| Input voltage (off) | VI(off) | -5.0 | V | VCE = -5 V, IC = -0.1 mA | |
| Transition frequency | fT | 150 | MHz | VCE = -10 V, IC = -5 mA | |
| Collector output capacitance | Cob | 6 | pF | VCB = -10 V, IE = 0 mA, f = 1 MHz | |
| Q1, Q2 Common Electrical Characteristics | Input resistance | R1 | 32.9 to 61.1 | k | |
| Resistor ratio | R1/R2 | 0.9 to 1.1 |
2411220316_TOSHIBA-RN4984-LF-CT_C7421328.pdf
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