7 channel Darlington sink driver TOSHIBA ULN2003APG suitable for relay lamp hammer and LED drivers
Key Attributes
Model Number:
ULN2003APG
Product Custom Attributes
Mfr. Part #:
ULN2003APG
Package:
DIP-16
Product Description
Product Overview
The ULN2003APG/AFWG Series are high-voltage, high-current 7-channel Darlington sink drivers. These integrated circuits feature integral clamp diodes for switching inductive loads, making them suitable for applications such as relay, hammer, lamp, and LED drivers. The 'G' suffix indicates a Lead (Pb)-Free product.
Product Attributes
- Brand: TOSHIBA
- Origin: Manufactured by Toshiba Malaysia
- Certifications: Lead (Pb)-Free (indicated by 'G' suffix)
Technical Specifications
| Type | Input Base Resistor | Logic Compatibility | Package Type | Weight (typ.) | Output Current (single output) | High Sustaining Voltage Output |
| ULN2003APG/AFWG | 2.7 k | TTL, 5 V CMOS | APG: DIP-16pin AFWG: SOL-16pin | APG: 1.11 g AFWG: 0.15 g | 500 mA max | 50 V min |
| ULN2004APG/AFWG | 10.5 k | 6~15 V PMOS, CMOS | APG: DIP-16pin AFWG: SOL-16pin | APG: 1.11 g AFWG: 0.15 g | 500 mA max | 50 V min |
| Characteristic | Symbol | Rating | Unit | Test Condition |
| Output sustaining voltage | VCE (SUS) | -0.5~50 | V | Ta = 25C |
| Output current | IOUT | 500 | mA/ch | Ta = 25C |
| Input voltage | VIN | -0.5~30 | V | Ta = 25C |
| Clamp diode reverse voltage | VR | 50 | V | Ta = 25C |
| Clamp diode forward current | IF | 500 | mA | Ta = 25C |
| Power dissipation (APG) | PD | 1.47 | W | On PCB (Test Board: JEDEC 2s2p), Ta = 25C |
| Power dissipation (AFWG) | PD | 1.25 | W | On PCB (Test Board: JEDEC 2s2p), Ta = 25C |
| Operating temperature | Topr | -40~85 | C | |
| Storage temperature | Tstg | -55~150 | C |
| Characteristic | Symbol | Min | Typ. | Max | Unit | Test Condition |
| Output leakage current | ICEX | 50 | A | VCE = 50 V, Ta = 25C | ||
| Output leakage current | ICEX | 100 | A | VCE = 50 V, Ta = 85C | ||
| Collector-emitter saturation voltage | VCE (sat) | 1.3 | 1.6 | V | IOUT = 350 mA, IIN = 500 A | |
| Collector-emitter saturation voltage | VCE (sat) | 1.1 | 1.3 | V | IOUT = 200 mA, IIN = 350 A | |
| Collector-emitter saturation voltage | VCE (sat) | 0.9 | 1.1 | V | IOUT = 100 mA, IIN = 250 A | |
| DC Current transfer ratio | hFE | 1000 | VCE = 2 V, IOUT = 350 mA | |||
| Input current (output on) ULN2003A | IIN (ON) | 0.4 | 0.7 | mA | VIN = 2.4 V, IOUT = 350 mA | |
| Input current (output on) ULN2004A | IIN (ON) | 0.8 | 1.2 | mA | VIN = 9.5 V, IOUT = 350 mA | |
| Input current (output off) | IIN (OFF) | 50 | 65 | A | IOUT = 500 A, Ta = 85C | |
| Clamp diode reverse current | IR | 50 | A | VR = 50 V, Ta = 25C | ||
| Clamp diode reverse current | IR | 100 | A | VR = 50 V, Ta = 85C | ||
| Clamp diode forward voltage | VF | 2.0 | V | IF = 350 mA | ||
| Turn-on delay | tON | 0.1 | s | VOUT = 50 V, RL = 125 , CL = 15 pF | ||
| Turn-off delay | tOFF | 0.2 | s | VOUT = 50 V, RL = 125 , CL = 15 pF |
2412090914_TOSHIBA-ULN2003APG_C5251.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
