TOSHIBA 2SA1832-YLF Silicon PNP Transistor Featuring Excellent hFE Linearity and Complementary Pair
Key Attributes
Model Number:
2SA1832-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
70@2mA,6V
Transition Frequency(fT):
80MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
PNP
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+125℃
Mfr. Part #:
2SA1832-Y,LF
Package:
SC-75(SOT-523)
Product Description
Product Overview
The TOSHIBA 2SA1832 is a silicon PNP epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage and high current capabilities with VCEO = -50 V and IC = -150 mA (max). Key features include excellent hFE linearity, high hFE values, and a complementary relationship with the 2SC4738. Its small package makes it suitable for various electronic applications.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor
- Process: PCT process
- Complementary to: 2SC4738
- Package: Small package
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -50 V, IE = 0 | - | - | -0.1 | µA |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | - | - | -0.1 | µA |
| DC current gain | hFE (Note) | VCE = -6 V, IC = -2 mA | 70 | - | 400 | - |
| Collector-emitter saturation voltage | VCE (sat) | IC = -100 mA, IB = -10 mA | - | -0.1 | -0.3 | V |
| Transition frequency | fT | VCE = -10 V, IC = -1 mA | 80 | - | - | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | - | 4 | 7 | pF |
Note on hFE Classification: O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
2410121840_TOSHIBA-2SA1832-Y-LF_C24014.pdf
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