TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and switching applications
Key Attributes
Model Number:
2SA1313-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
25@400mA,6V
Transition Frequency(fT):
200MHz
Vce Saturation(VCE(sat)):
250mV
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SA1313-Y,LF
Package:
SC-59
Product Description
Product Overview
The TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.
Product Attributes
- Brand: TOSHIBA
- Type: Silicon PNP Epitaxial Transistor (PCT process)
- Complementary to: 2SC3325
- Package: JEDEC TO-236MOD / JEITA SC-59
- Weight: 0.012 g (typ.)
- Start of commercial production: 1982-12
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -50 V, IE = 0 | - | - | -0.1 | A |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | - | - | -0.1 | A |
| DC current gain | hFE (1) | VCE = -1 V, IC = -100 mA | 70 | - | 240 | - |
| hFE (2) | VCE = -6 V, IC = -400 mA | 25 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = -100 mA, IB = -10 mA | - | -0.1 | -0.25 | V |
| Base-emitter voltage | VBE | VCE = -1 V, IC = -100 mA | - | -0.8 | -1.0 | V |
| Transition frequency | fT | VCE = -6 V, IC = -20 mA | - | 200 | - | MHz |
| Collector output capacitance | Cob | VCB = -6 V, IE = 0, f = 1 MHz | - | 13 | - | pF |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -50 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -500 | mA |
| Base current | IB | -50 | mA |
| Collector power dissipation | PC | 200 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
2411220627_TOSHIBA-2SA1313-Y-LF_C5184237.pdf
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