Bipolar Transistor Arrays

Product OverviewThe TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These integrated circuits are suitable for applications requiring high voltage and high current drive capabilities.Product AttributesBrand: TOSHIBAType: BiCD Integrated Circuit Silicon MonolithicMaterial: SiliconTechnical SpecificationsSeriesModelPackage TypePackage DetailsWeight

Product Overview The BCP54/BCP55/BCP56 series are NPN transistors designed for AF driver and output stages. They offer high collector current capabilities and a low collector-emitter saturation voltage. Complementary PNP types are available (BCP51 - BCP53). Product Attributes Brand: SLKOR (implied by website URL) Package Type: SOT-223 Technical Specifications Symbol Parameter BCP54 BCP55 BCP56 Units MAXIMUM RATINGS (TA=25 unless otherwise noted) VCBO Collector-Base Voltage 45

Product OverviewThe RN2401 to RN2406 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. The integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit

Product OverviewThe Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors. These transistors are designed for switching, inverter, interface, and driver circuit applications. Key advantages include high current capability (up to 800 mA), simplified circuit design, reduced component count, and lower VCE(sat). They are complementary to the RN2421 to RN2427 series.Product AttributesBrand: TOSHIBAType: Silicon NPN Epitaxial Type

Product Overview The FMMT493 is a high-performance NPN transistor designed for switching and AF amplifier applications. It is recommended as a complementary type to the PNP transistor FMMT593. This device offers robust performance with a collector-emitter voltage of up to 100V and a continuous collector current of 1A, making it suitable for various electronic circuits. Product Attributes Brand: SLKOR Micro Package Type: SOT-23 Marking: 493 Technical Specifications Parameter

Product DescriptionThe RN1310 and RN1311 are silicon NPN epitaxial transistors featuring built-in bias resistors. They are designed for switching, inverter circuits, interface circuits, and driver circuit applications. The integrated bias resistors simplify circuit design, reduce the number of components, and streamline the manufacturing process. These transistors are complementary to the RN2310 and RN2311.Product AttributesBrand: TOSHIBAMaterial: Silicon NPN Epitaxial

Product Overview This PNP transistor is designed for general-purpose applications. It offers reliable performance with key electrical characteristics such as DC current gain (hFE) and transition frequency (fT). The device is suitable for various electronic circuits requiring amplification or switching functions. Product Attributes Type: Transistor (PNP) Package: TO-92 Manufacturer/Brand: SLKOR (implied by www.slkormicro.com) Model Number: 2SA1015 Technical Specifications

Product Overview The S8050T is an NPN transistor designed for general-purpose applications. It offers a continuous collector current of 0.5 A and a collector-emitter voltage of 25 V. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 400 depending on the operating conditions. This transistor is housed in a compact SOT-523 package, suitable for space-constrained designs. Product Attributes Brand: slkormicro Model: S8050T Type: NPN Transistors

Unisonic Technologies 2N5551 NPN Silicon TransistorThe 2N5551 is a high voltage switching transistor designed for applications requiring high collector-emitter voltage and current gain. It is suitable for telephone switching circuits and amplifier applications.Product AttributesBrand: Unisonic Technologies Co., LtdMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentCollector-Base Voltage (VCBO)Collector-Emitter

Product OverviewThe HN1C01F is a Silicon NPN Epitaxial Type transistor from Toshiba, utilizing a PCT process. It is designed for audio frequency general purpose amplifier applications and features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 400), and excellent hFE linearity. This transistor is ideal for various general-purpose amplification needs.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by

L6221 Quad Darlington SwitchThe L6221 is a monolithic quad Darlington switch designed for high current, high voltage switching applications. It features four non-inverting inputs with an enable function, capable of handling output voltages up to 50 V and output currents up to 1.8 A. The device offers very low saturation voltage and TTL-compatible inputs, making it suitable for direct connection to logic circuits. Each switch includes an open-collector Darlington transistor

Product Overview The NPN Darlington Transistor is designed for high current gain applications. It offers robust performance with a maximum collector current of 500 mA and a collector power dissipation of 200 mW. This transistor is suitable for various electronic circuits requiring amplification and switching capabilities. Product Attributes Brand: SLKORMICRO (implied by website domain) Device Code: 3SS Model: MMBTA28 Package: SOT23 Technical Specifications Symbol Parameter

Product OverviewThe HN1A01FU is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It features a small dual-type package, high voltage capability (VCEO = -50 V), high collector current (-150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified.Product AttributesBrand: ToshibaCertifications: AEC-Q101 qualifiedPackage Type: US6 (Dual type)Production Start: 1991-01Technical SpecificationsCharacteristicsSymbolRatingUni

Product OverviewThe TBD62783A series is an 8-channel source-type DMOS transistor array designed for switching inductive loads. Each output includes a built-in clamp diode for protection. This series offers high voltage and high current capabilities, making it suitable for various driving applications.Product AttributesBrand: TOSHIBAOrigin: Silicon MonolithicTechnical SpecificationsModelPackage TypeWeight (Typ.)Output Voltage (Max)Output Current (Max per channel)Input Voltage

Product OverviewThe UMW ULN2003 is a high-voltage, high-current Darlington driver IC featuring 7 NPN Darlington pairs. It is designed for applications requiring direct connection to TTL, CMOS, and PMOS logic, eliminating the need for logic buffers. With a wide operating voltage range, high output voltage (up to 50V), and high output current (up to 500mA), it is suitable for driving various loads including relays, lamps, and motors. Integrated clamp diodes protect against

Product OverviewThe UTC MMBTA14 is a high-gain NPN silicon Darlington transistor designed for various electronic applications. It offers excellent current gain characteristics and is available in compact SOT-23 and SOT-323 packages, making it suitable for space-constrained designs.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackageCollector-Emitter Voltage (VCES)Collector

Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A in low-frequency power amplifier circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbol2SB6492SB649AUnitConditionsCollector-Base VoltageVCBO -180VCollector-Emitter

Product Overview The 2SA1037 is a PNP transistor designed for general-purpose applications. It offers a collector current capability of 150mA and a collector-emitter voltage of -50V. This transistor complements the 2SC2412 and is available in various classifications of DC current gain (hFE). It is housed in a compact SOT-23 package, making it suitable for space-constrained designs. Product Attributes Brand: slkormicro Type: PNP Transistors Package: SOT-23 Technical Specificat

Product OverviewThe UTC 2SA1627A is a PNP epitaxial silicon transistor designed for general-purpose amplifier and high-speed switching applications. It features high voltage, low collector saturation voltage, and high-speed switching capabilities.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackinghFE1 RangeVCBO (V)VCEO (V)IC (A)PC (W)2SA1627AL-x-AA3

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