Audio Frequency Amplifier Silicon NPN Transistor TOSHIBA HN1C01FYTE85LF with High Current Capability
Key Attributes
Model Number:
HN1C01FYTE85LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@2mA,6V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
HN1C01FYTE85LF
Package:
SC-74(SOT-457)
Product Description
Product Overview
The HN1C01F is a Silicon NPN Epitaxial Type transistor from Toshiba, utilizing a PCT process. It is designed for audio frequency general purpose amplifier applications and features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 400), and excellent hFE linearity. This transistor is ideal for various general-purpose amplification needs.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by manufacturer and website)
- Material: Silicon
- Certifications: RoHS compatible (mentioned in restrictions)
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Absolute Maximum Ratings | VCBO | 60 | V | (Q1, Q2 Common) | |||
| VCEO | 50 | V | (Q1, Q2 Common) | ||||
| VEBO | 5 | V | (Q1, Q2 Common) | ||||
| IC | 150 | mA | (Q1, Q2 Common) | ||||
| IB | 30 | mA | (Q1, Q2 Common) | ||||
| PC* | 300 | mW | (Q1, Q2 Common) | ||||
| Tj (Note 1) | 150 | C | (Q1, Q2 Common) | ||||
| Tj (Note 2) | 125 | C | (Q1, Q2 Common) | ||||
| Electrical Characteristics | ICBO | A | VCB = 60 V, IE = 0 A | 0.1 | |||
| IEBO | A | VEB = 5 V, IC = 0 A | 0.1 | ||||
| hFE (Note) | VCE = 6 V, IC = 2 mA | 120 | 400 | ||||
| VCE (sat) | V | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | |||
| fT | MHz | VCE = 10 V, IC = 1 mA | 80 | ||||
| Cob | pF | VCB = 10 V, IE = 0 A, f = 1 MHz | 2 | 3.5 |
2504101957_TOSHIBA-HN1C01FYTE85LF_C17193152.pdf
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