High Current Capability Silicon NPN Transistor TOSHIBA RN1425TE85LF for Switching and Driver Circuit

Key Attributes
Model Number: RN1425TE85LF
Product Custom Attributes
DC Current Gain:
90@100mA,1V
Emitter-Base Voltage VEBO:
5V
Current - Collector(Ic):
800mA
Type:
NPN
Transition Frequency(fT):
300MHz
Input Resistor:
470Ω
Vce Saturation(VCE(sat)):
250mV@1mA,50mA
Number:
1 NPN (Pre-Biased)
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1425TE85LF
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The Toshiba RN1421 to RN1427 series are NPN epitaxial silicon transistors featuring built-in bias resistors. These transistors are designed for switching, inverter, interface, and driver circuit applications. Key advantages include high current capability (up to 800 mA), simplified circuit design, reduced component count, and lower VCE(sat). They are complementary to the RN2421 to RN2427 series.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon NPN Epitaxial Type (PCT Process)
  • Package: S-Mini (JEDEC TO-236MOD / JEITA SC-59)
  • Weight: 12 mg (typ.)
  • Start of Commercial Production: 1988-03

Technical Specifications

Type No.R1 (k)R2 (k)VCBO (V)VCEO (V)VEBO (V)IC (max) (mA)PC (mW)Tj (C)Tstg (C)ICBO (max) (nA)ICEO (max) (mA)hFE (VCE=1V, IC=100mA)VCE(sat) (V)fT (MHz)Cob (pF)
RN142111505010800200150-55 to 150100500600.25 (IC=50mA, IB=2mA)3007
RN14222.22.2505010800200150-55 to 150100500650.25 (IC=50mA, IB=1mA)3007
RN14234.74.7505010800200150-55 to 150100500700.25 (IC=50mA, IB=1mA)3007
RN14241010505010800200150-55 to 150100500900.25 (IC=50mA, IB=1mA)3007
RN14250.471050505800200150-55 to 150100500900.25 (IC=50mA, IB=1mA)3007
RN142611050505800200150-55 to 150100500900.25 (IC=50mA, IB=1mA)3007
RN14272.21050506800200150-55 to 150100500900.25 (IC=50mA, IB=1mA)3007

2410121930_TOSHIBA-RN1425TE85LF_C6277052.pdf

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