NPN transistor UTC 2N5551G-B-AB3-R designed for applications requiring high voltage and current gain
Key Attributes
Model Number:
2N5551G-B-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
150@10mA,5V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
200mV
Type:
NPN
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
2N5551G-B-AB3-R
Package:
SOT-89
Product Description
Unisonic Technologies 2N5551 NPN Silicon Transistor
The 2N5551 is a high voltage switching transistor designed for applications requiring high collector-emitter voltage and current gain. It is suitable for telephone switching circuits and amplifier applications.
Product Attributes
- Brand: Unisonic Technologies Co., Ltd
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Collector Dissipation (PC) SOT-89 | Collector Dissipation (PC) TO-92 | DC Current Gain (hFE2) | Current Gain Bandwidth Product (fT) | Output Capacitance (COB) |
| 2N5551G-x-AB3-R | SOT-89 | B C E | 180 V | 160 V | 600 mA | 500 mW | - | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551G-x-T92-B | TO-92 | E B C | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551G-x-T92-K | TO-92 | E B C | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551G-x-T92-A-B | TO-92 | E C B | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551G-x-T92-A-K | TO-92 | E C B | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551L-x-T92-B | TO-92 | E B C | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551L-x-T92-K | TO-92 | E B C | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551L-x-T92-A-B | TO-92 | E C B | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
| 2N5551L-x-T92-A-K | TO-92 | E C B | 180 V | 160 V | 600 mA | - | 625 mW | 80-160 | 100-300 MHz | 6.0 pF |
2409272301_UTC-2N5551G-B-AB3-R_C87879.pdf
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