Switching and Inverter Circuit Transistor TOSHIBA RN1311 LF Silicon NPN with Built in Bias Resistors
Key Attributes
Model Number:
RN1311,LF
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
120@1mA,5V
Emitter-Base Voltage VEBO:
5V
Current - Collector(Ic):
100mA
Type:
NPN
Input Resistor:
10kΩ
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Number:
-
Pd - Power Dissipation:
100mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1311,LF
Package:
SOT-323
Product Description
Product Description
The RN1310 and RN1311 are silicon NPN epitaxial transistors featuring built-in bias resistors. They are designed for switching, inverter circuits, interface circuits, and driver circuit applications. The integrated bias resistors simplify circuit design, reduce the number of components, and streamline the manufacturing process. These transistors are complementary to the RN2310 and RN2311.
Product Attributes
- Brand: TOSHIBA
- Material: Silicon NPN Epitaxial Type
- Certifications: JEDEC, JEITA SC-70
Technical Specifications
| Characteristic | Symbol | Test Condition | RN1310 (Min) | RN1310 (Typ) | RN1310 (Max) | RN1311 (Min) | RN1311 (Typ) | RN1311 (Max) | Unit |
| Collector cut-off current | ICBO | VCB = 50V, IE = 0 | 100 | 100 | nA | ||||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 100 | 100 | nA | ||||
| DC current gain | hFE | VCE = 5V, IC = 1mA | 120 | 700 | 120 | 700 | |||
| Collector-emitter saturation voltage | VCE (sat) | IC = 5mA, IB = 0.25mA | 0.1 | 0.3 | 0.1 | 0.3 | V | ||
| Transition frequency | fT | VCE = 10V, IC = 5mA | 250 | 250 | MHz | ||||
| Collector output capacitance | Cob | VCB = 10V, IE = 0, f = 1MHz | 3 | 6 | 3 | 6 | pF | ||
| Input resistor | R1 | 3.29 | 4.7 | 6.11 | 7 | 10 | 13 | k |
2410010231_TOSHIBA-RN1311-LF_C85639.pdf
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