TOSHIBA HN1A01FU-YLF Silicon PNP Bipolar Transistor Featuring High Collector Current for Amplifiers
Key Attributes
Model Number:
HN1A01FU-Y,LF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@2mA,6V
Transition Frequency(fT):
80MHz
Number:
2 PNP
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
HN1A01FU-Y,LF
Package:
TSSOP-6(SC-88)SOT-363
Product Description
Product Overview
The HN1A01FU is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It features a small dual-type package, high voltage capability (VCEO = -50 V), high collector current (-150 mA max), and excellent hFE linearity. This device is AEC-Q101 qualified.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
- Package Type: US6 (Dual type)
- Production Start: 1991-01
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Absolute Maximum Ratings (Ta = 25 ) (Q1, Q2 Common) | VCBO | -50 | V | ||||
| VCEO | -50 | V | |||||
| VEBO | -5 | V | |||||
| IC | -150 | mA | |||||
| IB | -30 | mA | |||||
| PC (Note 4) | 200 | mW | |||||
| Tj | 150 | -55 to 150 | |||||
| Tstg | 125 | -55 to 125 | |||||
| Electrical Characteristics (Ta = 25 ) (Q1, Q2 Common) | ICBO | A | VCB = -50 V, IE = 0 mA | -0.1 | |||
| IEBO | A | VEB = -5 V, IC = 0 mA | -0.1 | ||||
| hFE | VCE = -6 V, IC = -2 mA | 120 | 400 | ||||
| VCE(sat) | V | IC = -100 mA, IB = -10 mA | -0.1 | -0.3 | |||
| fT | MHz | VCE = -10 V, IC = -1 mA | 80 | ||||
| Cob | pF | VCB = -10 V, IE = 0 mA, f = 1 MHz | 7 |
2504101957_TOSHIBA-HN1A01FU-Y-LF_C17442775.pdf
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