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quality Compact SOT523 packaged NPN transistor Slkor S8050T with 25V collector emitter voltage and high current gain factory
quality Compact SOT523 packaged NPN transistor Slkor S8050T with 25V collector emitter voltage and high current gain factory

Compact SOT523 packaged NPN transistor Slkor S8050T with 25V collector emitter voltage and high current gain

Key Attributes
Model Number: S8050T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@50mA,1V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050T
Package:
SOT-523
Product Description

Product Overview

The S8050T is an NPN transistor designed for general-purpose applications. It offers a continuous collector current of 0.5 A and a collector-emitter voltage of 25 V. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 400 depending on the operating conditions. This transistor is housed in a compact SOT-523 package, suitable for space-constrained designs.

Product Attributes

  • Brand: slkormicro
  • Model: S8050T
  • Type: NPN Transistors
  • Package: SOT-523

Technical Specifications

Parameter Symbol Test Conditions MIN TYP MAX Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 0.5 A
Collector Dissipation PC 0.2 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40 V, IE=0 0.1 A
Collector cut-off current ICEO VCB=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain HFE(1) VCE=1V, IC= 50mA 120 400
DC current gain HFE(2) VCE=1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA, f=30MHz 150 MHz

Package Dimensions (SOT-523)

DIM A A1 bp c D E e e1 HE Lp Q v w
MIN 0.8 0 0.15 0.08 1.7 1.4 0.45 0.7 0.45 0.3 0.1 0.1 0.1
TYP 0.95 0.05 0.2 0.1 1.8 1.5 0.5 0.8 0.5 0.4 0.2 0.15 0.15
MAX 1.1 0.1 0.25 0.12 1.9 1.6 0.55 0.9 0.55 0.5 0.3 0.2 0.2

Classification of hfe

Rank Marking Range
L J3Y 120-200
H S8050T 200-350
J 300-400

2208051030_Slkor-S8050T_C5122627.pdf

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