High Gain Silicon Darlington Transistor UTC MMBTA14G-AE3-R in SOT-23 Package for Electronic Applications
Key Attributes
Model Number:
MMBTA14G-AE3-R
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
20000
Transition Frequency(fT):
125MHz
Vce Saturation(VCE(sat)):
1.5V@100mA,0.1mA
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
MMBTA14G-AE3-R
Package:
SOT-23
Product Description
Product Overview
The UTC MMBTA14 is a high-gain NPN silicon Darlington transistor designed for various electronic applications. It offers excellent current gain characteristics and is available in compact SOT-23 and SOT-323 packages, making it suitable for space-constrained designs.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Collector-Emitter Voltage (VCES) | Collector Dissipation (PC MAX) | Collector Current (IC) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(SAT)) | Base-Emitter on Voltage (VBE(ON)) | Current Gain Bandwidth Product (fT) |
|---|---|---|---|---|---|---|---|---|
| MMBTA14L-AE3-R | SOT-23 | 30V | 350 mW | 500 mA | 20000 (typ) | 1.5V (typ) | 2.0V (typ) | 125 MHz |
| MMBTA14G-AE3-R | SOT-23 | 30V | 350 mW | 500 mA | 20000 (typ) | 1.5V (typ) | 2.0V (typ) | 125 MHz |
| MMBTA14L-AL3-R | SOT-323 | 30V | 350 mW | 500 mA | 20000 (typ) | 1.5V (typ) | 2.0V (typ) | 125 MHz |
| MMBTA14G-AL3-R | SOT-323 | 30V | 350 mW | 500 mA | 20000 (typ) | 1.5V (typ) | 2.0V (typ) | 125 MHz |
1806090834_UTC-MMBTA14G-AE3-R_C171471.pdf
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