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quality Built In Bias Resistor Silicon PNP Transistor TOSHIBA RN2402 LF for and Fast Switching Circuit Designs factory
quality Built In Bias Resistor Silicon PNP Transistor TOSHIBA RN2402 LF for and Fast Switching Circuit Designs factory

Built In Bias Resistor Silicon PNP Transistor TOSHIBA RN2402 LF for and Fast Switching Circuit Designs

Key Attributes
Model Number: RN2402,LF
Product Custom Attributes
DC Current Gain:
50@10mA,5V
Emitter-Base Voltage VEBO:
10V
Current - Collector(Ic):
100mA
Type:
PNP
Transition Frequency(fT):
200MHz
Input Resistor:
10kΩ
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Resistor Ratio:
1
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN2402,LF
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The RN2401 to RN2406 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. The integrated bias resistor simplifies circuit design by reducing the number of external components required, leading to smaller system sizes and faster assembly times. Toshiba offers a range of resistance values to suit various circuit designs. These devices are AEC-Q101 qualified and complementary to the RN1401 to RN1406 series.

Product Attributes

  • Brand: Toshiba
  • Material: Silicon
  • Certifications: AEC-Q101 qualified

Technical Specifications

Part NumberCollector-base voltage (VCBO)Collector-emitter voltage (VCEO)Emitter-base voltage (VEBO)Collector current (IC)Collector power dissipation (PC)Junction temperature (Tj)Storage temperature (Tstg)R1 (k)R2 (k)
RN2401-50 V-50 V-10 V-5 mA200 mW (Ta=25C)150 C-55 to 150 C4.74.7
RN2402-50 V-50 V-10 V-5 mA200 mW (Ta=25C)150 C-55 to 150 C1010
RN2403-50 V-50 V-10 V-5 mA200 mW (Ta=25C)150 C-55 to 150 C2222
RN2404-50 V-50 V-10 V-5 mA200 mW (Ta=25C)150 C-55 to 150 C4747
RN2405-50 V-50 V-10 V-5 mA100 mW (Ta=25C)150 C-55 to 150 C2.247
RN2406-50 V-50 V-10 V-5 mA100 mW (Ta=25C)150 C-55 to 150 C4.747
CharacteristicSymbolTest ConditionRN2401RN2402RN2403RN2404RN2405RN2406Unit
Collector cut-off currentICBOVCB = -50 V, IE = 0 mAMax -100Max -100Max -100Max -100Max -100Max -100nA
Emitter cut-off currentIEBOVEB = -10 V, IC = 0 mAMax -1.52Max -0.71Max -0.33Max -0.15Max -0.145Max -0.138A
DC current gainhFEVCE = -5 V, IC = -10 mAMin 30Min 50Min 70Min 80Min 80Min 80-
Collector-emitter saturation voltageVCE(sat)IC = -5 mA, IB = -0.25 mAMax -0.82Max -0.38Max -0.17Max -0.082Max -0.078Max -0.074V
Input voltage (ON)VI(ON)VCE = -0.2 V, IC = -5 mATyp. -1.1Typ. -1.2Typ. -1.3Typ. -1.5Typ. -0.6Typ. -0.7V
Input voltage (OFF)VI(OFF)VCE = -5 V, IC = -0.1 mATyp. -0.1Typ. -0.1Typ. -0.1Typ. -0.1Typ. -0.1Typ. -0.1V
Transition frequencyfTVCE = -10 V, IC = -5 mATyp. 200Typ. 200Typ. 200Typ. 200Typ. 200Typ. 200MHz
Collector output capacitanceCobVCB = -10 V, IE = 0 mA, f = 1 MHzTyp. 3.29Typ. 7Typ. 15.4Typ. 32.9Typ. 1.54Typ. 3.29pF
Input resistanceR1-Typ. 4.7Typ. 10Typ. 22Typ. 47Typ. 2.2Typ. 4.7k
Resistor ratioR1/R2-Typ. 1.0Typ. 1.0Typ. 1.0Typ. 1.0Typ. 0.0468Typ. 0.1-

2410121959_TOSHIBA-RN2402-LF_C17444589.pdf

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