Switching inductive loads with 8 channel DMOS transistor array TOSHIBA TBD62783AFGZEL featuring clamp diode

Key Attributes
Model Number: TBD62783AFG(Z,EL)
Product Custom Attributes
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
TBD62783AFG(Z,EL)
Package:
SOP-18-300mil
Product Description

Product Overview

The TBD62783A series is an 8-channel source-type DMOS transistor array designed for switching inductive loads. Each output includes a built-in clamp diode for protection. This series offers high voltage and high current capabilities, making it suitable for various applications requiring robust output driving.

Product Attributes

  • Brand: TOSHIBA
  • Origin: Silicon Monolithic

Technical Specifications

ModelPackage TypeWeight (Typ.)VOUT (MAX)IOUT (MAX per channel)VIN (Output ON) (MIN)VIN (Output OFF) (MAX)
TBD62783APGP-DIP18-300-2.54-0011.3g50 V-500 mA2.0 V0.6 V
TBD62783AFGSOP18-P-375-1.270.41g50 V-500 mA2.0 V0.6 V
TBD62783AFNGSSOP18-P-225-0.650.09g50 V-500 mA2.0 V0.6 V
TBD62783AFWGP-SOP18-0812-1.27-0010.48g50 V-500 mA2.0 V0.6 V
CharacteristicSymbolRatingUnitNotes
Power supply voltageVCC-0.5 to 50VAbsolute Maximum Rating
Output current (for each channel)IOUT-500mAAbsolute Maximum Rating
Input voltageVIN-0.5 to 30VAbsolute Maximum Rating
Clamp diode reverse voltageVR50VAbsolute Maximum Rating
Clamp diode forward currentIF500mAAbsolute Maximum Rating
Power dissipation (PG)PD1.47WDevice alone. Derate 11.8 mW/C above 25C.
Power dissipation (FG)PD0.96WDevice alone. Derate 7.7 mW/C above 25C.
Power dissipation (FNG)PD0.96WOn PCB (50x50mm). Derate 7.7 mW/C above 25C.
Power dissipation (FWG)PD1.31WOn PCB (75x114mm). Derate 10.48 mW/C above 25C.
Operating temperatureTopr-40 to 85C
Storage temperatureTstg-55 to 150C
Output leakage currentIleak1.0AVCC=50V, VIN=0V, Ta=85C
Output voltage (ON-resistance)VDS (RON)0.56 (1.6) to 1.14 (3.25)V ()IOUT=-350mA, VIN=5V, VCC=5V (values in parentheses are )
Input current (Output ON)IIN (ON)0.1mAVIN=2.0V
Input current (Output OFF)IIN (OFF)1.0AVIN=0V, Ta=85C
Supply current (per channel)ICC1.5mAVIN=2.0V, VCC=50V, Output open
Clamp diode reverse currentIR1.0AVR=50V, Ta=85C
Clamp diode forward voltageVF2.0VIF=350mA
Turn-on delaytON0.4sVCC=50V, RL=125, CL=15pF
Turn-off delaytOFF2.0sVCC=50V, RL=125, CL=15pF

2410121449_TOSHIBA-TBD62783AFG-Z-EL_C840444.pdf

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