PNP Silicon Transistor UTC 2SA1797G-B-AB3-R with Low Saturation Voltage and Excellent DC Current Gain
Key Attributes
Model Number:
2SA1797G-B-AB3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@500mA,2V
Transition Frequency(fT):
200MHz
Vce Saturation(VCE(sat)):
350mV@1A,50mA
Type:
PNP
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA1797G-B-AB3-R
Package:
SOT-89-3
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SA1797 is a PNP Silicon Transistor designed for power applications. It features low saturation voltage with a VCE(SAT) of -0.35V (MAX) at IC / IB = -1A / -50mA and excellent DC current gain characteristics.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) | Collector Power Dissipation (PC) | DC Current Gain (hFE) | Transition Frequency (fT) |
| 2SA1797G-x-AA3-R | SOT-223 | B C E | -50 V | -50 V | -6 V | -2 A (DC) / -5 A (PULSE) | 0.8 W | 120-400 | 200 MHz |
| 2SA1797G-x-AB3-R | SOT-89 | B C E | -50 V | -50 V | -6 V | -2 A (DC) / -5 A (PULSE) | 0.5 W | 120-400 | 200 MHz |
| 2SA1797L-x-T9N-B / 2SA1797G-x-T9N-B | TO-92NL | E C B | -50 V | -50 V | -6 V | -2 A (DC) / -5 A (PULSE) | 1 W | 120-400 | 200 MHz |
| 2SA1797L-x-T9N-K / 2SA1797G-x-T9N-K | TO-92NL | E C B | -50 V | -50 V | -6 V | -2 A (DC) / -5 A (PULSE) | 1 W | 120-400 | 200 MHz |
| 2SA1797L-x-TN3-R / 2SA1797G-x-TN3-R | TO-252 | B C E | -50 V | -50 V | -6 V | -2 A (DC) / -5 A (PULSE) | 1.9 W | 120-400 | 200 MHz |
2409272301_UTC-2SA1797G-B-AB3-R_C87295.pdf
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