High speed switching transistor UTC 2SD1816L-R-TN3-R in small TO 252 package for electronic circuits
Key Attributes
Model Number:
2SD1816L-R-TN3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
DC Current Gain:
100@500mA,5V
Transition Frequency(fT):
180MHz
Vce Saturation(VCE(sat)):
150mV
Type:
NPN
Pd - Power Dissipation:
1W
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
2SD1816L-R-TN3-R
Package:
TO-252
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compact designs, high fT, and fast switching speeds.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Type: NPN PLANAR TRANSISTOR
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Ordering Number | Package | Pin Assignment | Lead Free | Halogen Free | Packing |
| 2SD1816L-x-TF3-T | TO-220F | B C E | Yes | Yes | Tube |
| 2SD1816G-x-TF3-T | TO-220F | B C E | No | No | Tube |
| 2SD1816L-x-TM3-T | TO-251 | B C E | Yes | Yes | Tube |
| 2SD1816G-x-TM3-T | TO-251 | B C E | No | No | Tube |
| 2SD1816L-x-TMS-R | TO-251S | B C E | Yes | Yes | Tape Reel |
| 2SD1816G-x-TMS-R | TO-251S | B C E | No | No | Tape Reel |
| 2SD1816L-x-TN3-R | TO-252 | B C E | Yes | Yes | Tape Reel |
| 2SD1816G-x-TN3-R | TO-252 | B C E | No | No | Tape Reel |
| Parameter | Symbol | Ratings | Unit |
| Collector-Base Voltage | VCBO | 120 | V |
| Collector-Emitter Voltage | VCEO | 100 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current (DC) | IC | 4 | A |
| Collector Current (PULSE) | IC | 8 | A |
| Collector Power Dissipation (TO-251/TO-252) | PD | 1 | W |
| Collector Power Dissipation (TO-220F) | PD | 2 | W |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -40 ~ +150 | C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector Base Breakdown Voltage | BVCBO | IC =10A, IE =0 | 120 | V | ||
| Collector Emitter Breakdown Voltage | BVCEO | IC =1mA, RB= | 100 | V | ||
| Emitter Base Breakdown Voltage | BVEBO | IE =10A, IC=0 | 6 | V | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC = 2A, IB =0.2A | 0.9 | 1.2 | V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 2A, IB=0.2A | 150 | 400 | mV | |
| Collector Cut-Off Current | ICBO | VCB = 100 V, IE =0 | 1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB = 4V, IC=0 | 1 | A | ||
| DC Current Transfer Ratio | hFE1 | VCE = 5V, IC = 0.5A | 70 | 400 | ||
| DC Current Transfer Ratio | hFE2 | VCE =5V, IC = 3A | 40 | |||
| Transition Frequency | fT | VCE =10V, IC =0.5A | 180 | MHz | ||
| Output Capacitance | Cob | VCB =10V, IE =0A, f =1MHz | 40 | pF | ||
| Turn-on Time | tON | See test circuit | 100 | ns | ||
| Storage Time | tSTG | See test circuit | 900 | ns | ||
| Fall Time | tF | See test circuit | 50 | ns |
2304140030_UTC-2SD1816L-R-TN3-R_C71139.pdf
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