TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Key Attributes
Model Number:
TTA006B,Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
200nA
DC Current Gain:
320@100mA,5V
Transition Frequency(fT):
70MHz
Type:
PNP
Vce Saturation(VCE(sat)):
1.5V@500mA,50mA
Pd - Power Dissipation:
1.5W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
230V
Mfr. Part #:
TTA006B,Q
Package:
TO-126N
Product Description
Product Overview
The TTA006B is a silicon PNP epitaxial bipolar transistor designed for power amplifier and audio-frequency amplifier applications. It features a high collector voltage of -230 V (min), small collector output capacitance (30 pF typ.), and a high transition frequency (70 MHz typ.). It is complementary to the TTC011B.
Product Attributes
- Brand: Toshiba
- Material: Silicon
- Type: PNP Epitaxial Bipolar Transistor
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-base voltage | VCBO | -230 | V | |||
| Collector-emitter voltage | VCEO | -230 | V | |||
| Emitter-base voltage | VEBO | -5 | V | |||
| Collector current (DC) | IC | (Tc = 25 ℃) | -1 | A | ||
| Collector current (pulsed) | ICP | (Tc = 25 ℃) | -2 | A | ||
| Base current | IB | -0.5 | A | |||
| Collector power dissipation | PC | (Note 1) | 1.5 | W | ||
| Collector power dissipation | PC | (Note 1) | 10 | W | ||
| Junction temperature | Tj | 150 | ℃ | |||
| Storage temperature | Tstg | -55 | to | 150 | ℃ | |
| Electrical Characteristics (Static) | ||||||
| Collector cut-off current | ICBO | VCB = -230 V, IE = 0 A | -200 | nA | ||
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 A | -100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -10 mA, IB = 0 A | -230 | V | ||
| DC current gain | hFE | VCE = -5 V, IC = -0.1 A | 100 | 320 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = -0.5 A, IB = -50 mA | -1.5 | V | ||
| Base-emitter voltage | VBE | VCE = -5 V, IC = -0.5 A | -1.0 | V | ||
| Electrical Characteristics (Dynamic) | ||||||
| Collector output capacitance | Cob | VCB = -10 V, IE = 0 A, f = 1 MHz | 30 | pF | ||
| Transition frequency | fT | VCE = -10 V, IC = -0.1 A | 70 | MHz | ||
2506301747_TOSHIBA-TTA006B-Q_C6340373.pdf
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