power management dual N Channel TrenchFET Power MOSFET Slkor SL6800C with low gate charge and robust design
Key Attributes
Model Number:
SL6800C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14.3pF
Number:
2 N-Channel
Output Capacitance(Coss):
22.3pF
Input Capacitance(Ciss):
176pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
1.5nC@4.5V
Mfr. Part #:
SL6800C
Package:
SOT-23-6L
Product Description
Product Overview
The SL6800C is a dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for various surface-mount applications. Its robust design ensures reliable performance with high current handling capabilities.
Product Attributes
- Brand: SLKormicro
- Package: SOT-23-6L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | |
| Electrical Characteristics | Drain-Source Breakdown Voltage (BV(BR)DSS) | VGS=0V, ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | -- | -- | 1 | A | |
| Gate-Body Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 100 | nA | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 0.5 | 0.9 | 1.5 | V | |
| Static Electrical Characteristics @ TJ = 25C | Drain-Source On-State Resistance (RDS(on)) | VGS=10V, ID=2A | -- | 70 | 90 | m |
| Drain-Source On-State Resistance (RDS(on)) | VGS=4.5V, ID=1A | -- | 76 | 106 | m | |
| Drain-Source On-State Resistance (RDS(on)) | VDS=15V, ID=1A, VGS=4.5V | -- | -- | -- | m | |
| Diode Continuous Forward Current (VSD) | TJ=25, IS=2A, VDS=15V, VGS=0V, f=1MHz | -- | 0.86 | 1.2 | V | |
| Dynamic Electrical Characteristics @ TJ = 25C | Input Capacitance (CISS) | VDD=15V, ID=2A, VGS=4.5V, RG=3 | -- | 176 | -- | pF |
| Output Capacitance (COSS) | -- | 22.3 | -- | pF | ||
| Reverse Transfer Capacitance (CRSS) | -- | 14.3 | -- | pF | ||
| Switching Characteristics | Total Gate Charge (Qg) | TJ=25, IS=2A, VDS=15V | -- | 1.5 | -- | nC |
| Gate Source Charge (Qgs) | -- | 0.3 | -- | nC | ||
| Gate Drain Charge (Qgd) | -- | 0.5 | -- | nC | ||
| Turn-on Delay Time (td(on)) | -- | 9 | -- | nS | ||
| Turn-on Rise Time (tr) | -- | 35 | -- | nS | ||
| Turn-Off Delay Time (td(off)) | -- | 16 | -- | nS | ||
| Turn-Off Fall Time (tf) | -- | 8 | -- | nS | ||
| Absolute Maximum Ratings | Drain-Source Breakdown Voltage (V(br)DSS) | -- | 30 | -- | V | |
| Maximum Junction Temperature (TJ) | -- | -- | 150 | C | ||
| Storage Temperature Range (TSTG) | -- | -50 | 155 | C | ||
| Power Dissipation | Diode Continuous Forward Current (IS) | Tc=25C, Mounted on Large Heat Sink | -- | 2 | -- | A |
| Pulse Drain Current (IDM) | Tc=25C | -- | 8.4 | -- | A | |
| Tested Continuous Drain Current (ID) | Tc=25C | -- | 2 | -- | A | |
| Thermal Resistance | Junction-Ambient (RJA) | (*1 in2 Pad of 2-oz Copper), Max. | -- | 114 | -- | C/W |
| Gate-Source Voltage (VGS) | -- | 20 | -- | V |
2410122027_Slkor-SL6800C_C2965531.pdf
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