Medium Speed Switching and Audio Frequency Amplification Using UTC MMBT1616AG-G-AE3-R NPN Transistor
Key Attributes
Model Number:
MMBT1616AG-G-AE3-R
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,2V
Transition Frequency(fT):
160MHz
Type:
NPN
Vce Saturation(VCE(sat)):
150mV
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
MMBT1616AG-G-AE3-R
Package:
SOT-23
Product Description
Product Overview
The MMBT1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. Packaged in a SOT-23 (JEDEC TO-236) case, it offers reliable performance for various electronic circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Epitaxial Silicon
- Certifications: Lead Free, Halogen Free (for specific order numbers)
Technical Specifications
| Parameter | Symbol | MMBT1616 | MMBT1616A | Unit | Test Conditions | Min | Typ | Max |
| Collector to Base Voltage | VCBO | 60 | V | |||||
| 120 | V | |||||||
| Collector to Emitter Voltage | VCEO | 50 | V | |||||
| 60 | V | |||||||
| Emitter to Base Voltage | VEBO | 6 | V | |||||
| Collector Current DC | IC | 1 | A | |||||
| Collector Current Pulse | IC | 2 | A | Pulse width ≤10ms, Duty cycle < 50% | ||||
| Total Collector Dissipation | PD | 350 | mW | TA=25°C | ||||
| Junction Temperature | TJ | +150 | °C | |||||
| Storage Temperature | TSTG | -55 ~ +150 | °C | |||||
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=60V | ||||
| Emitter Cut-Off Current | IEBO | 100 | nA | VEB= 6V | ||||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC=1A, IB=50mA | 0.15 | |||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC=1A, IB=50mA | 0.9 | |||
| Base Emitter On Voltage | VBE(ON) | 700 | mV | VCE=2V, IC=50mA | 600 | 640 | ||
| DC Current Gain | hFE1 | 600 | VCE=2V, IC=100mA | 135 | ||||
| 400 | ||||||||
| 270 | ||||||||
| DC Current Gain | hFE2 | 81 | VCE=2V, IC=1A | |||||
| Current Gain Bandwidth Product | fT | 160 | MHz | VCE=2V, IC=100mA | 100 | |||
| Output Capacitance | Cob | 19 | pF | VCB=10V, f=1MHz | ||||
| Turn On Time | ton | 0.07 | us | VCE=10V, IC=100mA | ||||
| Storage Time | ts | 0.95 | us | IB1=-IB2=10mA | ||||
| Fall Time | tf | 0.07 | us | VBE(off)=-2-3V | ||||
2201121630_UTC-MMBT1616AG-G-AE3-R_C2934671.pdf
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