High Current N Channel Superjunction MOSFET Slkor SL8N65CF with Low On Resistance and Fast Switching
Key Attributes
Model Number:
SL8N65CF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
383pF
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
10.1nC@10V
Mfr. Part #:
SL8N65CF
Package:
TO-220F
Product Description
Product Overview
The SL8N65CF/SL8N65CD is an N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. These devices are well-suited for high-efficiency switched-mode power supplies.
Product Attributes
- Brand: Slkor
- Technology: Super-JMOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| SL8N65CF/SL8N65CD | Absolute Maximum Ratings (TC = 25C unless otherwise noted) | |||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (TC = 25) | 8* | A | |||
| ID | Drain Current - Continuous (TC = 100) | 4.8* | A | |||
| IDM | Drain Current - Pulsed (Note 1) | 24* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 156 | mJ | |||
| SL8N65CF/SL8N65CD | Electrical Characteristics (TC = 25C unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250uA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V | 1 | uA | ||
| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 2.5 | 4.5 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 2.5 A | 550 | 600 | m | |
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 1MHz | 383 | pF | ||
| SL8N65CF/SL8N65CD | Switching Characteristics (Note 4, 5) | |||||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID =2.5 A, RG = 10 ,VGS = 10 V | 6 | ns | ||
| tr | Turn-On Rise Time | 7 | ns | |||
| td(off) | Turn-Off Delay Time | 26 | ns | |||
| tf | Turn-Off Fall Time | 13 | ns | |||
| Qg | Total Gate Charge | VDS = 400 V, ID =2.5A, VGS = 10 V | 10.1 | nC | ||
| SL8N65CF/SL8N65CD | Drain-Source Diode Characteristics and Maximum Ratings | |||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 8 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 24 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS = 2.5A | 1.2 | V | ||
| SL8N65CF/SL8N65CD | Thermal Characteristics | |||||
| RJC | Thermal Resistance, Junction-to-Case | 5.2 | 1.8 | /W | ||
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | 62.5 | /W | ||
2402290600_Slkor-SL8N65CF_C18208654.pdf
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