Bipolar Transistor Arrays
TOSHIBA RN1302 LXGF Silicon NPN Bipolar Transistors Featuring Built-in Bias Resistors for Electronic Systems
Product OverviewThe RN1301 to RN1306 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors, manufactured using the PCT process. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. Toshiba offers a variety of resistance values
UMW ULN2003AIPWR UMW 7 channel Darlington driver IC compatible with TTL CMOS PMOS logic without buffer
Product OverviewThe UMW ULN2003 is a high-voltage, high-current Darlington driver IC featuring 7 NPN Darlington pairs. It is designed for driving high-current loads and is compatible with TTL, CMOS, and PMOS logic levels without requiring a logic buffer. Each channel offers a sink current of up to 500mA and a withstand voltage of 50V, making it suitable for various interface applications including relay drivers, DC lamp drivers, and step motor drivers.Product AttributesBrand:
switching solution TOSHIBA TBD62083AFWG Z EHZ 8 channel DMOS transistor array for inductive loads
Product OverviewThe TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode. These devices offer high voltage and high current capabilities, making them suitable for various applications. Careful consideration of thermal conditions during use is recommended.Product AttributesBrand: TOSHIBAType: BiCD Integrated Circuit Silicon MonolithicMaterial: SiliconTechnical
Medium power NPN transistor UTC D882SSG-P-AE3-R ideal for DC-DC converters and audio amplifier applications
D882SS NPN SILICON TRANSISTORThe D882SS is a medium power, low voltage NPN silicon transistor designed for applications requiring high current output up to 3A. It features low saturation voltage and is complementary to the B772SS. Ideal for audio power amplifiers, DC-DC converters, and voltage regulators.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SILICON TRANSISTOROrigin: Taiwan (implied by .tw domain)Technical SpecificationsParameterSymbolTest
High current NPN transistor UTC PZT1816G-S-AA3-R featuring fast switching speed and compact SOT-223 package design
Product OverviewThe UNISONIC PZT1816 is an NPN planar transistor designed for high current switching applications. It features a low collector-to-emitter saturation voltage, good linearity of hFE, and a small, slim package that facilitates compact set designs. With a high transition frequency (fT) and fast switching speed, this transistor is suitable for demanding electronic circuits.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDOrigin: TaiwanProduct Type: NPN Planar
Silicon Transistor UTC 2SD2470L-E-T9S-B Featuring Low Saturation Voltage and 5A Collector Current
Product OverviewThe 2SD2470 is an NPN Silicon Transistor designed for strobo and DC/DC converters. It features a low saturation voltage of 0.25V (typ) at IC/IB= 3A/0.1A and can handle a collector current of 5A. This transistor is available in TO-92SP, TO-220, and SOT-89 packages.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDCertifications: Lead Free, Halogen FreeTechnical SpecificationsOrdering NumberPackagePin AssignmentPackingCollector-Emitter Voltage (VCEO
NPN epitaxial silicon transistor UTC 2SD1616AG-G-T92-K for audio frequency power amplification and switching
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: NPN Epitaxial Silicon TransistorTechnical SpecificationsParameterSymbol2SD16162SD1616AUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO60120VCollector to Emitter VoltageVCEO5060VEmitter to Base VoltageVEBO
TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage and High Current Gain
Product OverviewThe TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB typ.). It is complementary to the 2SA1163 and comes in a small package.Product AttributesBrand: TOSHIBAOrigin: Japan (implied by manufacturer)Material: SiliconPackage: JEDEC TO
Silicon NPN Epitaxial Transistor TOSHIBA RN1403 TE85L F for Simplified Design and Reduced Components
Product OverviewThe RN1401 to RN1406 series are silicon NPN epitaxial bipolar transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interfacing, and driver circuit applications. Their integrated bias resistor simplifies circuit design, reduces the number of external components, and contributes to system size reduction and assembly time savings. They are AEC-Q101 qualified and complementary to the RN2401 to RN2406
Power application NPN transistor UTC MMBT5551G B AE3 R featuring high current gain and voltage rating
Product OverviewThe UTC MMBT5551 is a high voltage, fast-switching NPN silicon transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconType: NPN TransistorTechnical SpecificationsParameterSymbolRatingUnitTest ConditionsCollector-Base VoltageVCBO180VIC=100μA, IE=0Collector-Emitter
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TBC847B LM for Low Frequency Amplifier Applications
Product Overview The TBC847 is a silicon NPN epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings. Product Attributes Brand: Toshiba Corporation Material: Silicon NPN Epitaxial Type Start of Commercial Production: 2016-05 Technical Specifications Characteristics Symbol Rating Unit Test Condition Min Typ. Max Absolute Maximum Ratings (Unless
Silicon PNP Transistor UTC 2SB1116L-G-T92-B Featuring 50 Volt VCEO and 1 Amp Collector Current Rating
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP Epitaxial Silicon Transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage and current ratings.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsPart NumberPackageCollector to Base Voltage (VCBO)Collector to Emitter Voltage
Silicon NPN Epitaxial Transistor TOSHIBA RN1706 LF Ultra Super Mini Type with Built In Bias Resistors
Product OverviewThe TOSHIBA RN1701 to RN1706 series are NPN epitaxial silicon transistors featuring built-in bias resistors. These transistors are designed for switching, inverter circuits, interface circuits, and driver circuits. They offer advantages such as simplified circuit design, reduced component count, and miniaturization of equipment. The series includes devices in a USV (ultra super mini type with 5 leads) package and offers various resistance values to suit
Power Amplification Transistor TOSHIBA TTC011B Q S Silicon NPN Epitaxial with 230V Collector Voltage
Product OverviewThe TTC011B is a silicon NPN epitaxial bipolar transistor designed for power and audio-frequency amplification applications. It features a high collector voltage of 230V, low collector output capacitance of 20pF, and a high transition frequency of 100MHz. It is complementary to the TTA006B.Product AttributesBrand: ToshibaMaterial: Silicon NPN EpitaxialPackaging: TO-126NCertifications: RoHS CompatibleTechnical SpecificationsCharacteristicsSymbolTest ConditionMi
Switching regulator transistor UTC 2SC5353L-TF3-T high voltage NPN silicon type for DC DC converter
UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTORThe 2SC5353 is a high voltage NPN silicon transistor designed for switching regulator and high voltage switching applications, as well as high-speed DC-DC converter applications. It features excellent switching times with a typical rise time of 0.7s and fall time of 0.5s, and a high collector breakdown voltage of VCEO = 700V.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead
Multi Channel YONGYUTAI ULN2003 Darlington Transistor Array with 500mA Collector Current per Output
Product OverviewThe ULN2003 is a high-voltage, high-current Darlington transistor array featuring seven open-collector common-emitter pairs. Each pair is rated at 500mA with high-voltage outputs up to 50V. Integrated suppression diodes are included for inductive load driving, and the inputs are compatible with various logic types. This device is ideal for relay-driver applications and can drive a wide range of loads including solenoids, relays, DC motors, LED displays,
Low Saturation Voltage NPN Silicon Transistor UTC 2SC2655G-Y-AE3-R for Power Amplifier Applications
Product OverviewThe UNISONIC TECHNOLOGIES CO., LTD 2SC2655 is an NPN Silicon Transistor designed for power amplifier and power switching applications. It features low saturation voltage (VCE(SAT)= 0.5V Max.) and high-speed switching time (TSTG=1.0s Typ.).Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SiliconCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolRatingUnitTest ConditionsMinTypMaxAbsolute Maximum RatingsVCBO50VVCEO50VVEB
High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers
Product OverviewThe 2SC2712 is a silicon NPN epitaxial bipolar transistor, first produced in October 1982. It is designed for low-frequency amplifiers, audio frequency general-purpose amplification, and AM amplifiers. Key features include high voltage (VCEO = 50 V), high collector current (IC = 150 mA max), excellent hFE linearity, and low noise (NF = 1 dB typ.). It is AEC-Q101 qualified and complementary to the 2SA1162.Product AttributesBrand: ToshibaType: Silicon NPN
Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification
Product Overview The TOSHIBA 2SC2714 is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5 dB typ.). Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Planar Type (PCT process) Origin: Japan (implied by TOSHIBA) Package: JEDEC TO
PNP Silicon Epitaxial Transistor UTC 2SA1020L-Y-T9N-B for Power Amplifier and Switching Applications
Product OverviewThe UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage of -0.5V (max) at -1A and high-speed switching time of 1.0s (typ). It is a complement to the UTC 2SC2655.Product AttributesBrand: UNISONIC TECHNOLOGIES CO., LTDMaterial: SILICON PNP EPITAXIAL TRANSISTORCertifications: Lead Free, Halogen FreeTechnical SpecificationsParameterSymbolSOT-23SOT-89TO-92/TO
