Power application NPN transistor UTC MMBT5551G B AE3 R featuring high current gain and voltage rating
Key Attributes
Model Number:
MMBT5551G-B-AE3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
150@10mA,5V
Transition Frequency(fT):
100MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
200mV
Type:
NPN
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5551G-B-AE3-R
Package:
SOT-23
Product Description
Product Overview
The UTC MMBT5551 is a high voltage, fast-switching NPN silicon transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: NPN Transistor
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Collector-Base Voltage | VCBO | 180 | V | IC=100μA, IE=0 |
| Collector-Emitter Voltage | VCEO | 160 | V | IC=1mA, IB=0 |
| Emitter-Base Voltage | VEBO | 6 | V | IE=10μA, IC=0 |
| DC Collector Current | IC | 600 | mA | |
| Power Dissipation | PD | 350 | mW | |
| Junction Temperature | TJ | +150 | °C | |
| Storage Temperature | TSTG | -40 ~ +150 | °C | |
| Junction to Ambient Thermal Resistance | ΘJA | 357 | °C/W | |
| Junction to Case Thermal Resistance | ΘJC | 104 | °C/W | |
| Collector Cut-off Current | ICBO | 50 | nA | VCB=120V, IE=0 |
| Emitter Cut-off Current | IEBO | 50 | nA | VBE=4V, IC =0 |
| DC Current Gain | hFE | 80-170 (Rank A), 150-240 (Rank B), 200-400 (Rank C) | VCE=5V, IC =1mA (Rank A), VCE=5V, IC =10mA (Rank B, C) | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.15 (typ), 0.2 (typ) | V | IC=10mA, IB=1mA; IC=50mA, IB=5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1 | V | IC=10mA, IB=1mA; IC=50mA, IB=5mA |
| Current Gain Bandwidth Product | fT | 100-300 | MHz | VCE=10V, IC =10mA, f=100MHz |
| Output Capacitance | Cob | 6.0 | pF | VCB=10V, IE=0, f=1MHz |
| Noise Figure | NF | 8 (max) | dB | IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz |
1809192215_UTC-MMBT5551G-B-AE3-R_C87881.pdf
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