Power Amplification Transistor TOSHIBA TTC011B Q S Silicon NPN Epitaxial with 230V Collector Voltage
Key Attributes
Model Number:
TTC011B,Q(S
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
200nA
Transition Frequency(fT):
100MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
1.5V@0.5A,50mA
Pd - Power Dissipation:
1.5W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
230V
Mfr. Part #:
TTC011B,Q(S
Package:
TO-126N
Product Description
Product Overview
The TTC011B is a silicon NPN epitaxial bipolar transistor designed for power and audio-frequency amplification applications. It features a high collector voltage of 230V, low collector output capacitance of 20pF, and a high transition frequency of 100MHz. It is complementary to the TTA006B.
Product Attributes
- Brand: Toshiba
- Material: Silicon NPN Epitaxial
- Packaging: TO-126N
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Static Characteristics (Ta = 25C unless otherwise specified) | ||||||
| Collector cut-off current | ICBO | VCB = 230 V, IE = 0 A | 200 | nA | ||
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 A | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 A | 230 | V | ||
| DC current gain | hFE | VCE = 5 V, IC = 0.1 A | 100 | 320 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC = 0.5 A, IB = 50 mA | 1.5 | V | ||
| Base-emitter voltage | VBE | VCE = 5 V, IC = 0.5 A | 1.0 | V | ||
| Dynamic Characteristics (Ta = 25C unless otherwise specified) | ||||||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0 A, f = 1 MHz | 20 | pF | ||
| Transition frequency | fT | VCE = 10 V, IC = 0.1 A | 100 | MHz | ||
| Absolute Maximum Ratings (Ta = 25C unless otherwise specified) | ||||||
| Collector-base voltage | VCBO | 230 | V | |||
| Collector-emitter voltage | VCEO | 230 | V | |||
| Emitter-base voltage | VEBO | 5 | V | |||
| Collector current (DC) | IC | 1 | A | |||
| Collector current (pulsed) | ICP | 2 | A | |||
| Base current | IB | 0.5 | A | |||
| Collector power dissipation (Tc = 25C) | PC | (Note 1) | 1.5 | W | ||
| Collector power dissipation (Ta = 25C) | PC | 10 | W | |||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature | Tstg | -55 | to | 150 | C | |
Note 1: Ensure that the junction temperature does not exceed 150C.
2507101655_TOSHIBA-TTC011B-Q-S_C22413468.pdf
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