switching solution TOSHIBA TBD62083AFWG Z EHZ 8 channel DMOS transistor array for inductive loads
Key Attributes
Model Number:
TBD62083AFWG(Z,EHZ
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
TBD62083AFWG(Z,EHZ
Package:
SOP-18-300mil
Product Description
Product Overview
The TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode. These devices offer high voltage and high current capabilities, making them suitable for various applications. Careful consideration of thermal conditions during use is recommended.
Product Attributes
- Brand: TOSHIBA
- Type: BiCD Integrated Circuit Silicon Monolithic
- Material: Silicon
Technical Specifications
| Series | Package Type | Package Name | Weight (Typ.) | Output Voltage (MAX) | Output Current (MAX) | Input Voltage (Output ON) MIN | Input Voltage (Output OFF) MAX | Power Dissipation (PD) |
| TBD62083A / TBD62084A | PG | P-DIP18-300-2.54-001 | 1.3 g | 50 V | 500 mA/ch | TBD62083A: 2.5 V TBD62084A: 7.0 V | TBD62083A: 0.6 V TBD62084A: 1.0 V | 1.47 W (Device alone) |
| TBD62083A / TBD62084A | FG | SOP18-P-375-1.27 | 0.41 g | 50 V | 500 mA/ch | TBD62083A: 2.5 V TBD62084A: 7.0 V | TBD62083A: 0.6 V TBD62084A: 1.0 V | 0.96 W (Device alone) |
| TBD62083A / TBD62084A | FNG | SSOP18-P-225-0.65 | 0.09 g | 50 V | 500 mA/ch | TBD62083A: 2.5 V TBD62084A: 7.0 V | TBD62083A: 0.6 V TBD62084A: 1.0 V | 0.96 W (On PCB) |
| TBD62083A / TBD62084A | FWG | P-SOP18-0812-1.27-001 | 0.48 g | 50 V | 500 mA/ch | TBD62083A: 2.5 V TBD62084A: 7.0 V | TBD62083A: 0.6 V TBD62084A: 1.0 V | 1.31 W (On PCB) |
2411220247_TOSHIBA-TBD62083AFWG-Z-EHZ_C108880.pdf
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