Silicon PNP Transistor UTC 2SB1116L-G-T92-B Featuring 50 Volt VCEO and 1 Amp Collector Current Rating
Key Attributes
Model Number:
2SB1116L-G-T92-B
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Transition Frequency(fT):
120MHz
Vce Saturation(VCE(sat)):
300mV@1A,50mA
Type:
PNP
Pd - Power Dissipation:
750mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-20℃~+85℃
Mfr. Part #:
2SB1116L-G-T92-B
Package:
TO-92
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A is a PNP Epitaxial Silicon Transistor designed as a complement to the UTC 2SD1616/A. It is suitable for various electronic applications requiring a PNP transistor with specific voltage and current ratings.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Part Number | Package | Collector to Base Voltage (VCBO) | Collector to Emitter Voltage (VCEO) | Emitter to Base Voltage (VEBO) | Collector Current (IC) | Pulse Collector Current (ICM) | Total Power Dissipation (PC) | Junction Temperature (TJ) | Operating Temperature (TOPR) | Storage Temperature (TSTG) |
| 2SB1116 | SOT-89 | -60 V | -50 V | -6 V | -1 A | -2 A | 500 mW | +150 C | -20 ~ +85 C | -55 ~ +150 C |
| 2SB1116A | SOT-89 | -80 V | -60 V | -6 V | -1 A | -2 A | 500 mW | +150 C | -20 ~ +85 C | -55 ~ +150 C |
| 2SB1116 | TO-92 | -60 V | -50 V | -6 V | -1 A | -2 A | 750 mW | +150 C | -20 ~ +85 C | -55 ~ +150 C |
| 2SB1116A | TO-92 | -80 V | -60 V | -6 V | -1 A | -2 A | 750 mW | +150 C | -20 ~ +85 C | -55 ~ +150 C |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Unit | 2SB1116 (Min) | 2SB1116 (Typ) | 2SB1116 (Max) | 2SB1116A (Min) | 2SB1116A (Typ) | 2SB1116A (Max) |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-1A, IB=-50mA | V | -0.2 | -0.3 | -0.2 | -0.3 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=-1A, IB=-50mA | V | -0.9 | -1.2 | -0.9 | -1.2 | ||
| Base Emitter On Voltage | VBE(ON) | VCE=-2V, IC=-50mA | mV | -600 | -650 | -700 | -600 | -650 | -700 |
| Collector Cut-Off Current | ICBO | VCB=-60V, IE=0 | nA | -100 | -100 | ||||
| Emitter Cut-Off Current | IEBO | VEB=-6V, IC=0 | nA | -100 | -100 | ||||
| DC Current Gain | hFE1 | VCE=-2V, IC=-100mA | 135 | 600 | 135 | 400 | |||
| DC Current Gain | hFE2 | VCE=-2V, IC=-1A | 81 | 81 | |||||
| Transition Frequency | fT | VCE=-2V, IC=-100mA | MHz | 70 | 120 | 70 | 120 | ||
| Output Capacitance | COB | VCB=-10V, IE=0, f=1MHz | pF | 25 | 25 | ||||
| Turn On Time | tON | VCC=-10V, IC=-100mA IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V | s | 0.07 | 0.07 | ||||
| Storage Time | tSTG | ||||||||
| Fall Time | tF |
hFE1 Classification
| RANK | hFE1 |
| Y | 135 ~ 270 |
| G | 200 ~ 400 |
| L | 300 600 |
2212091108_UTC-2SB1116L-G-T92-B_C5310430.pdf
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