PNP Silicon Epitaxial Transistor UTC 2SA1020L-Y-T9N-B for Power Amplifier and Switching Applications
Key Attributes
Model Number:
2SA1020L-Y-T9N-B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
DC Current Gain:
120@500mA,2V
Transition Frequency(fT):
100MHz
Number:
1 PNP
Type:
PNP
Vce Saturation(VCE(sat)):
500mV@1A,0.05A
Pd - Power Dissipation:
900mW
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
2SA1020L-Y-T9N-B
Package:
TO-92-3
Product Description
Product Overview
The UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage of -0.5V (max) at -1A and high-speed switching time of 1.0s (typ). It is a complement to the UTC 2SC2655.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: SILICON PNP EPITAXIAL TRANSISTOR
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | SOT-23 | SOT-89 | TO-92/TO-92NL | Unit | Conditions |
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | Ic | -2 | A | |||
| Collector Power Dissipation | PC | 300 | 500 | 900 | mW | (TA=25) |
| Junction Temperature | TJ | +150 | ||||
| Operating Temperature | TOPR | -40 ~ +150 | C | |||
| Storage Temperature | TSTG | -55 ~ +150 | C | |||
| Junction to Ambient Thermal Resistance | JA | 417 | 250 | 125 | C/W | |
| Junction to Case Thermal Resistance | JC | 208.3 | 156.3 | 83.3 | C/W | |
| Collector to Emitter Breakdown Voltage | BVCEO | -50 | V | IC=-10mA, IB=0 | ||
| Collector Cut-off Current | ICBO | -1.0 | A | VCB=-50V, IE=0 | ||
| Emitter Cut-off Current | IEBO | -1.0 | A | VEB=-5V, IC=0 | ||
| DC Current Gain (Rank O) | hFE1 | 70 - 140 | VCE=-2V, IC=-0.5A | |||
| DC Current Gain (Rank Y) | hFE1 | 120 - 240 | VCE=-2V, IC=-0.5A | |||
| DC Current Gain | hFE2 | 40 | VCE=-2V, IC=-1.5A | |||
| Collector to Emitter Saturation Voltage | VCE(SAT) | -0.5 | V | IC=-1A, IB=-0.05A | ||
| Base to Emitter Saturation Voltage | VBE(SAT) | -1.2 | V | IC=-1A, IB=-0.05A | ||
| Transition Frequency | fT | 100 | MHz | VCE=-2V, Ic=-0.5A | ||
| Collector Output Capacitance | COB | 80 | pF | VCB=-10V, IE=0, f=1MHz | ||
| Input Capacitance | Cibo | 310 | pF | VBE=-0.5V, f=1MHz | ||
| Turn-on Time | tON | 0.1 | s | |||
| Storage Time | tSTG | 1.0 | s | |||
| Fall Time | tF | 0.1 | s | |||
2306281549_UTC-2SA1020L-Y-T9N-B_C2848652.pdf
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