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quality Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification factory
quality Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification factory

Silicon NPN Transistor TOSHIBA 2SC2714-Y TE85L F Designed for High Frequency RF and IF Amplification

Key Attributes
Model Number: 2SC2714-Y(TE85L,F)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
500nA
DC Current Gain:
40@1mA,6V
Transition Frequency(fT):
550MHz
Number:
1 NPN
Type:
NPN
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
20mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+125℃
Mfr. Part #:
2SC2714-Y(TE85L,F)
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The TOSHIBA 2SC2714 is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplification. Key advantages include small reverse transfer capacitance (Cre = 0.7 pF typ.) and a low noise figure (NF = 2.5 dB typ.).

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon NPN Epitaxial Planar Type (PCT process)
  • Origin: Japan (implied by TOSHIBA)
  • Package: JEDEC TO-236 / JEITA SC-59 (TOSHIBA 2-3F1A)
  • Weight: 12 mg (typ.)
  • Start of Commercial Production: 1982-10

Technical Specifications

Characteristics Symbol Test Condition Min Typ. Max Unit
Absolute Maximum Ratings
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 4 V
Collector current IC 20 mA
Base current IB 4 mA
Collector power dissipation PC (Ta = 25C) 100 mW
Junction temperature Tj 125 C
Storage temperature range Tstg -55 125 C
Electrical Characteristics (Ta = 25C)
Collector cut-off current ICBO VCB = 40 V, IE = 0 0.5 A
Emitter cut-off current IEBO VEB = 4 V, IC = 0 0.5 A
DC current gain hFE (Note) VCE = 6 V, IC = 1 mA 40 200
Reverse transfer capacitance Cre VCB = 6 V, f = 1 MHz 0.70 pF
Transition frequency fT VCE = 6 V, IC = 1 mA 550 MHz
Collector-base time constant Ccrbb VCB = 6 V, IE = 1 mA, f = 30 MHz 30 ps
Noise figure NF 2.5 5.0 dB
Power gain Gpe VCC = 6 V, IE = 1 mA, f = 100 MHz, Figure 1 17 23 dB
S-MINI Parameter (typ.) (Ta = 25C, Common emitter: VCE = 6 V, IE = 1 mA, f = 100 MHz)
Input conductance gie 2.9 mS
Input capacitance Cie 10.2 pF
Reverse transfer admittance yre 0.33 mS
Phase angle of reverse transfer admittance re -90
Forward transfer admittance |yfe| 40 mS
Phase angle of forward transfer admittance fe -20
Output conductance goe 45 S
Output capacitance Coe 1.1 pF
S-MINI Parameter (typ.) (Ta = 25C, Common base: VCE = 6 V, IE = 1 mA, f = 100 MHz)
Input conductance gib 34 mS
Input capacitance Cib -10 pF
Reverse transfer admittance yrb 0.27 mS
Phase angle of reverse transfer admittance rb -105
Forward transfer admittance |yfb| 34 mS
Phase angle of forward transfer admittance fb 165
Output conductance gob 45 S
Output capacitance Cob 1.1 pF

2504101957_TOSHIBA-2SC2714-Y-TE85L-F_C17563125.pdf

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