Medium power NPN transistor UTC D882SSG-P-AE3-R ideal for DC-DC converters and audio amplifier applications
Key Attributes
Model Number:
D882SSG-P-AE3-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
DC Current Gain:
160@1A,2V
Transition Frequency(fT):
80MHz
Vce Saturation(VCE(sat)):
500mV@2A,0.2A
Type:
NPN
Pd - Power Dissipation:
10W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
D882SSG-P-AE3-R
Package:
SOT-23
Product Description
D882SS NPN SILICON TRANSISTOR
The D882SS is a medium power, low voltage NPN silicon transistor designed for applications requiring high current output up to 3A. It features low saturation voltage and is complementary to the B772SS. Ideal for audio power amplifiers, DC-DC converters, and voltage regulators.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: SILICON TRANSISTOR
- Origin: Taiwan (implied by .tw domain)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVCBO | IC=100A, IE=0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=1mA, IB=0 | 30 | V | ||
| Emitter-Base Breakdown Voltage | BVEBO | IE=100A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=30V, IE=0 | 1000 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=3V, IC=0 | 1000 | nA | ||
| DC Current Gain (hFE1) | hFE1 | VCE=2V, IC=20mA | 30 | 200 | ||
| DC Current Gain (hFE2) | hFE2 | VCE=2V, IC=1A | 100 | 150 | 400 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=2A, IB=0.2A | 0.3 | 0.5 | V | |
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=2A, IB=0.2A | 1.0 | 2.0 | V | |
| Current Gain Bandwidth Product | fT | VCE=5V, IC=0.1A | 80 | MHz | ||
| Output Capacitance | Cob | VCB=10V, IE=0, f=1MHz | 45 | pF |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 30 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 3 | A |
| Pulse Collector Current | ICP | 7 | A |
| Base Current | IB | 0.6 | A |
| Collector Dissipation (TA=25C) | PC | 350 | mW |
| Collector Dissipation (TC=25C) | PC | 10 | W |
| Junction Temperature | TJ | +150 | C |
| Storage Temperature | TSTG | -55 ~ +150 | C |
1808280039_UTC-D882SSG-P-AE3-R_C171505.pdf
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