Power MOSFET Slkor SL0G50A 60V 50A with low on resistance high avalanche energy and thermal performance
Key Attributes
Model Number:
SL0G50A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
83W
Output Capacitance(Coss):
115pF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
SL0G50A
Package:
PDFN-8L(5x6)
Product Description
Product Overview
This 60V/50A N-Channel MOSFET, model SL0G50A, features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability with high EAS. Its excellent package ensures good heat dissipation, making it suitable for power switching applications.
Product Attributes
- Brand: SLKOR Micro
- Model: SL0G50A
- Package: PDFN5X6-8L
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | -- | -- | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60VVGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 1.1 | 1.6 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V ID=20A | -- | 13 | 17 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5VID=20A | -- | 18 | 23 | m |
| Input Capacitance | CISS | VDS=30VVGS=0V f=1MHz | -- | 1890 | -- | pF |
| Output Capacitance | COSS | VDS=30VVGS=0V f=1MHz | -- | 115 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=30VVGS=0V f=1MHz | -- | 90 | -- | pF |
| Total Gate Charge | Qg | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 40 | -- | nC |
| Gate Source Charge | Qgs | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 7 | -- | nC |
| Gate Drain Charge | Qgd | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 8.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 13 | -- | nS |
| Turn-on Rise Time | tr | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 25 | -- | nS |
| Turn-Off Delay Time | td(off) | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 60 | -- | nS |
| Turn-Off Fall Time | tf | VDS=30VRL=6.7 VGS=10VRG=3 | -- | 10 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=20A | -- | 0.8 | 1.2 | V |
| Diode Continuous Forward Current | IS | Tc=25C | -- | -- | 50 | A |
| Pulse Drain Current | IDM | Tc=25C | -- | -- | 190 | A |
| Tested Continuous Drain Current | ID | Tc=25C | -- | -- | 50 | A |
| Maximum Power Dissipation | PD | Mounted on Large Heat Sink Tc=25C | -- | 83 | -- | W |
| Single pulse avalanche energy | EAS | Note1 | -- | 98 | -- | mJ |
| Maximum Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -50 | -- | 155 | C |
2412171034_Slkor-SL0G50A_C42415154.pdf
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