switching Slkor SL4459 P Channel MOSFET with low gate voltage and robust current handling capability
Product Overview
The SL4459 P-Channel MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 4.5V, making it suitable for load switch and PWM applications. This device provides high power and current handling capability.
Product Attributes
- Brand: SLKOR
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -6.5 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -22 | A | |||
| Maximum Power Dissipation | PD | (TA=25) | 2 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 50 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250µA | -1 | -2 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-6.5A | 46 | mΩ | ||
| VGS=-4.5V, ID=-5A | 72 | mΩ | ||||
| Forward Transconductance | gFS | VDS=-15V,ID=-6.5A | 4 | 7 | S | |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 1040 | PF | |||
| Output Capacitance | Coss | 420 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 150 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6Ω | 15 | nS | ||
| Turn-on Rise Time | tr | 13 | nS | |||
| Turn-Off Delay Time | td(off) | 58 | nS | |||
| Turn-Off Fall Time | tf | 21 | nS | |||
| Gate Charge (Note 4) | ||||||
| Total Gate Charge | Qg | VDS=-15V,ID=-6.5A,VGS=-10V | 12 | nC | ||
| Gate-Source Charge | Qgs | 2.2 | nC | |||
| Gate-Drain Charge | Qg d | 3 | nC | |||
| Drain-Source Diode Characteristics (Note 3) | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.7A | -1.2 | V | ||
2410121531_Slkor-SL4459_C5155406.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.