NPN epitaxial silicon transistor UTC 2SD1616AG-G-T92-K for audio frequency power amplification and switching
Key Attributes
Model Number:
2SD1616AG-G-T92-K
Product Custom Attributes
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,2V
Transition Frequency(fT):
160MHz
Vce Saturation(VCE(sat)):
150mV
Type:
NPN
Pd - Power Dissipation:
750mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
2SD1616AG-G-T92-K
Package:
TO-92-3
Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: NPN Epitaxial Silicon Transistor
Technical Specifications
| Parameter | Symbol | 2SD1616 | 2SD1616A | Unit | Test Conditions | Min | Typ | Max | |
| Collector to Base Voltage | VCBO | 60 | 120 | V | |||||
| Collector to Emitter Voltage | VCEO | 50 | 60 | V | |||||
| Emitter to Base Voltage | VEBO | 6 | V | ||||||
| Collector Current | IC | 1 | A | ||||||
| Pulse Collector Current | ICM | 2 | A | Pulse width≤10ms, Duty cycle<50% | |||||
| Total Power Dissipation | PC | 750 | mW | TA=25°C | |||||
| Junction Temperature | TJ | +150 | °C | ||||||
| Storage Temperature | TSTG | -55 ~ +150 | °C | ||||||
| Collector-Emitter Saturation Voltage | VCE (SAT) | V | IC=1A, IB=50mA | 0.15 | 0.3 | ||||
| Base-Emitter Saturation Voltage | VBE (SAT) | V | IC=1A, IB=50mA | 0.9 | 1.2 | ||||
| Base Emitter On Voltage | VBE (ON) | mV | VCE =2V, IC =50mA | 600 | 640 | 700 | |||
| Collector Cut-Off Current | ICBO | nA | VCB=60V | 100 | |||||
| Emitter Cut-Off Current | IEBO | nA | VEB= 6V | 100 | |||||
| DC Current Gain | hFE1 | 135 ~ 600 | VCE =2V, IC =100mA | 135 | 600 | ||||
| DC Current Gain | hFE2 | VCE =2V, IC=1A | 81 | ||||||
| Transition Frequency | fT | MHz | VCE =2V, IC =100mA | 100 | 160 | ||||
| Output Capacitance | Cob | pF | VCB =10V, f =1MHz | 19 | |||||
| Turn On Time | tON | μs | VCE =10V, IC =100mA | 0.07 | |||||
| Storage Time | tSTG | μs | IB1 = -IB2 =10mA | 0.95 | |||||
| Fall Time | tF | μs | VBE(OFF) = -2 ~ -3V | 0.07 | |||||
2304140030_UTC-2SD1616AG-G-T92-K_C95072.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
